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参数资料
| 型号： | AD5262BRUZ200 |
| 厂商： | Analog Devices Inc |
| 文件页数： | 19/24页 |
| 文件大小： | 0K |
| 描述： | IC POT DUAL 200K 256POS 16TSSOP |
| 标准包装： | 96 |
| 接片： | 256 |
| 电阻（欧姆）： | 200k |
| 电路数： | 2 |
| 温度系数： | 标准值 35 ppm/°C |
| 存储器类型： | 易失 |
| 接口： | 4 线 SPI（芯片选择） |
| 电源电压： | 4.5 V ~ 16.5 V，±4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 16-TSSOP |
| 包装： | 管件 |
| 产品目录页面： | 787 (CN2011-ZH PDF) |
AD5260/AD5262
Rev. A | Page 4 of 24
Parameter
Symbol
Conditions
Min
Max
Unit
Bandwidth –3 dB
BW
RAB = 20 kΩ/50 kΩ/200 kΩ
310/130/30
kHz
Total Harmonic Distortion
THDW
VA = 1 VRMS, VB = 0 V, f = 1 kHz,
RAB = 20 kΩ
0.014
%
VW Settling Time
tS
VA = +5 V, VB = 5 V, ±1 LSB
error band, RAB = 20 kΩ
5
μs
Crosstalk11
CT
VA = VDD, VB = 0 V, measure VW
with adjacent RDAC making
full-scale code change (AD5262
only)
1
nV-sec
Analog Crosstalk
CTA
VA1 = VDD, VB1 = 0 V, measure VW1
with VW2 = 5 V p-p at f = 10 kHz,
RAB = 20 kΩ/200 kΩ (AD5262
only)
–64
dB
Resistor Noise Voltage
eN_WB
RWB = 20 kΩ, f = 1 kHz
13
nV/√Hz
Specifications apply to all parts
Clock Frequency
fCLK
25
MHz
Input Clock Pulse Width
tCH, tCL
Clock level high or low
20
ns
Data Setup Time
tDS
10
ns
Data Hold Time
tDH
10
ns
tPD
RL = 1 kΩ, CL< 20 pF
1
160
ns
CS Setup Time
tCSS
5
ns
CS High Pulse Width
tCSW
20
ns
Reset Pulse Width
tRS
50
ns
CLK Fall to CS Rise Hold Time
tCSH
0
ns
CS Rise to Clock Rise Setup
tCS1
10
ns
1 Typical values represent average readings at 25°C and VDD = +5 V, VSS = 5 V.
2 Resistor position nonlinearity error (R-INL) is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper
positions. R-DNL measures the relative step change from ideal between successive tap positions. Parts are guaranteed monotonic. IW = VDD/R for both VDD = +5 V and
VSS = 5V.
3 VAB = VDD, wiper = no connect.
4 INL and DNL are measured at VW with the RDAC configured as a potentiometer divider similar to a voltage output digital-to-analog converter. VA = VDD and VB = 0 V.
DNL specification limits of ±1 LSB maximum are guaranteed monotonic operating conditions.
5 Resistor Terminal A, Terminal B, and Terminal W have no limitations on polarity with respect to each other.
6 Guaranteed by design and not subject to production test.
7 Measured at the Ax terminals. All Ax terminals are open-circuit in shutdown mode.
8 Worst-case supply current consumed when all logic-input levels set at 2.4 V, which is the standard characteristic of CMOS logic.
9 PDISS is calculated from (IDD × VDD). CMOS logic level inputs result in minimum power dissipation.
10 All dynamic characteristics use VDD = +5 V, VSS = 5 V, VL = +5 V.
11 Measured at VW where an adjacent VW is making a full-scale voltage change.
12 See Figure 5 for location of measured values. All input control voltages are specified with tR = tF = 2 ns (10% to 90% of 3 V) and timed from a voltage level of 1.5 V.
Switching characteristics are measured using VL = 5 V.
13 Propagation delay depends on value of VDD, RL, and CL.
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