参数资料
型号: AD650SD
厂商: Analog Devices Inc
文件页数: 9/20页
文件大小: 385K
描述: IC V-F/F-V CONV 1MHZ 14-CDIP
标准包装: 1
类型: 电压至频率和频率至电压
频率 - 最大: 1MHz
全量程: ±150ppm/°C
线性: ±0.1%
安装类型: 通孔
封装/外壳: 14-CDIP(0.300",7.62mm)
供应商设备封装: 14-CDIP
包装: 管件
Data Sheet
AD650
 
Rev. E | Page 9 of 20
If the approximate amount of noise that appears on CINT is known
(VNOISE), then the value of CINT can be checked using the following
inequality:
NOISE
S
OS
INT
V
V
A
t
C
-
-
+
?/DIV>
?/DIV>
>
-
V
3
10
1
3
 
(8)
For example, consider an application calling for a maximum
frequency of 75 kHz, a 0 V to 1 V signal range, and supply
voltages of only ? V. The component selection guide of Figure 9
is used to select 2.0 k?for RIN and 1000 pF for COS. This results
in a one-shot time period of approximately 7 約. Substituting
75 kHz into Equation 7 yields a value of 1300 pF for C
INT
. When
the input signal is near zero, 1 mA flows through the integration
capacitor to the switched current sink during the reset phase,
causing the voltage across CINT to increase by approximately 5.5 V.
Because the integrator output stage requires approximately 3 V
headroom for proper operation, only 0.5 V margin remains for
integrating extraneous noise on the signal line. A negative noise
pulse at this time could saturate the integrator, causing an error
in signal integration. Increasing C
INT
 to 1500 pF or 2000 pF
provides much more noise margin, thereby eliminating this
potential trouble spot.
1MHz
100kHz
10kHz
50  100
1000
C
OS
 (pF)
INPUT
RESISTOR
16.9k
20k
40.2k
100k
 
Figure 9. Full-Scale Frequency vs. COS
100
20
50  100
1000
ONE SHOT CAPACITOR
C
OS
 (pF)
1000
INPUT
RESISTOR
16.9k
40.2k
100k
20k
 
Figure 10. Typical Nonlinearity vs. COS
 
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