参数资料
型号: AD743JR-16
厂商: Analog Devices Inc
文件页数: 12/12页
文件大小: 0K
描述: IC OPAMP BIFET 4.5MHZ LN 16SOIC
标准包装: 47
放大器类型: J-FET
电路数: 1
转换速率: 2.8 V/µs
-3db带宽: 4.5MHz
电流 - 输入偏压: 250pA
电压 - 输入偏移: 250µV
电流 - 电源: 8.1mA
电流 - 输出 / 通道: 40mA
电压 - 电源,单路/双路(±): 9.6 V ~ 36 V,±4.8 V ~ 18 V
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.295",7.50mm 宽)
供应商设备封装: 16-SOIC W
包装: 管件
REV. E
AD743
–9–
HOW CHIP PACKAGE TYPE AND POWER DISSIPATION
AFFECT INPUT BIAS CURRENT
As with all JFET input amplifiers, the input bias current of
the AD743 is a direct function of device junction temperature,
IB approximately doubling every 10
°C. Figure 8 shows the rela-
tionship between the bias current and the junction temperature
for the AD743. This graph shows that lowering the junction
temperature will dramatically improve IB.
–60
–40
–20
0
20
40
60
80
100
120
140
10–12
10–11
10–10
10–9
10–8
10–7
10–6
INPUT
BIAS
CURRENT
(A)
JUNCTION TEMPERATURE ( C)
TA = 25 C
VS = ±15V
Figure 8. Input Bias Current vs. Junction Temperature
The dc thermal properties of an IC can be closely approximated
by using the simple model of Figure 9, where current represents
power dissipation, voltage represents temperature, and resistors
represent thermal resistance ( in
°C/W).
TA
PIN
PIN = DEVICE DISSIPATION
TA = AMBIENT TEMPERATURE
TJ = JUNCTION TEMPERATURE
JC = THERMAL RESISTANCE—JUNCTION TO CASE
CA = THERMAL RESISTANCE—CASE TO AMBIENT
JA
TJ
CA
JC
Figure 9. Device Thermal Model
From this model, TJ = TA + JA PIN. Therefore, IB can be deter-
mined in a particular application by using Figure 8 together with
the published data for JA and power dissipation. The user can
modify JA by using of an appropriate clip-on heat sink, such as
the Aavid No. 5801. JA is also a variable when using the AD743
in chip form. Figure 10 shows the bias current versus the supply
voltage with JA as the third variable. This graph can be used to
predict bias current after JA has been computed. Again, bias cur-
rent will double for every 10
°C. The designer using the AD743
in chip form (Figure 11) must also be concerned with both
JC and
CA, since
JC can be affected by the type of die mount
technology used.
Typically, JC will be in the 3
°C/W to 5°C/W range; therefore,
for normal packages, this small power dissipation level may be
ignored. But, with a large hybrid substrate, JC will dominate
proportionately more of the total JA.
SUPPLY VOLTAGE ( V)
300
0
515
10
INPUT
BIAS
CURRENT
(pA) 200
100
TA = +25 C
JA = 165 C/W
JA = 0 C/W
JA = 115 C/W
Figure 10. Input Bias Current vs. Supply Voltage
for Various Values of JA
(DIE MOUNT
TO CASE)
(J TO
DIE MOUNT)
A
A +
B =
JC
B
CASE
TA
TJ
Figure 11. Breakdown of Various Package Thermal
Resistances
REDUCED POWER SUPPLY OPERATION FOR LOWER IB
Reduced power supply operation lowers IB in two ways: first, by
lowering both the total power dissipation and second, by reduc-
ing the basic gate-to-junction leakage (Figure 10). Figure 12
shows a 40 dB gain piezoelectric transducer amplifier, which
operates without an ac-coupling capacitor over the –40
°C to
+85
°C temperature range. If the optional coupling capacitor is
used, this circuit will operate over the entire –55
°C to +125°C
military temperature range.
AD743
*OPTIONAL DC BLOCKING CAPACITOR
**OPTIONAL, SEE TEXT
TRANSDUCER
CT
C1*
CT**
10k
100
108 **
108
+5V
–5V
Figure 12. Piezoelectric Transducer
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AD743JRZ-16 功能描述:IC OPAMP BIFET 4.5MHZ LN 16SOIC RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:1 系列:- 放大器类型:通用 电路数:4 输出类型:满摆幅 转换速率:0.028 V/µs 增益带宽积:105kHz -3db带宽:- 电流 - 输入偏压:3nA 电压 - 输入偏移:100µV 电流 - 电源:3.3µA 电流 - 输出 / 通道:12mA 电压 - 电源,单路/双路(±):2.7 V ~ 12 V,±1.35 V ~ 6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:14-TSSOP(0.173",4.40mm 宽) 供应商设备封装:14-TSSOP 包装:剪切带 (CT) 其它名称:OP481GRUZ-REELCT
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