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| 型号： | AD745KR-16-REEL |
| 厂商： | Analog Devices Inc |
| 文件页数： | 11/12页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP BIFET 20MHZ ULN 16SOIC |
| 标准包装： | 1,000 |
| 放大器类型： | J-FET |
| 电路数： | 1 |
| 转换速率： | 12.5 V/µs |
| 增益带宽积： | 20MHz |
| -3db带宽： | 20MHz |
| 电流 - 输入偏压： | 150pA |
| 电压 - 输入偏移： | 100µV |
| 电流 - 电源： | 8mA |
| 电流 - 输出 / 通道： | 40mA |
| 电压 - 电源，单路/双路(±)： | 9.6 V ~ 36 V，±4.8 V ~ 18 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SOIC W |
| 包装： | 带卷 (TR) |
REV. D
AD745
–8–
Figures 5 and 6 show two ways to buffer and amplify the output
of a charge output transducer. Both require the use of an ampli-
fier that has a very high input impedance, such as the AD745.
Figure 5 shows a model of a charge amplifier circuit. Here,
amplification depends on the principle of conservation of charge
at the input of amplifier A1, which requires that the charge on
capacitor CS be transferred to capacitor CF, thus yielding an
output voltage of
Q/CF. The amplifiers input voltage noise will
appear at the output amplified by the noise gain (1 + (CS/CF))
of the circuit.
A1
CB*
RB*
CS
R2
R1
RS
CF
R1
R2
CS
CF
=
Figure 5. A Charge Amplifier Circuit
RB
CS
A2
CB*
R1
R2
RB*
*OPTIONAL, SEE TEXT.
Figure 6. Model for A High Z Follower with Gain
The second circuit, Figure 6, is simply a high impedance fol-
lower with gain. Here the noise gain (1 + (R1/R2)) is the same
as the gain from the transducer to the output. Resistor RB, in
both circuits, is required as a dc bias current return.
There are three important sources of noise in these circuits.
Amplifiers A1 and A2 contribute both voltage and current noise,
while resistor RB contributes a current noise of:
~
N
k
T
R
f
B
= 4
where:
k = Boltzman’s Constant = 1.381
× 10–23 Joules/Kelvin
T = Absolute Temperature, Kelvin (0
°C = 273.2 Kelvin)
f = Bandwidth – in Hz (Assuming an Ideal “Brick Wall”
Filter)
This must be root-sum-squared with the amplifier’s own current
noise.
Figure 5 shows that these two circuits have an identical frequency
response and the same noise performance (provided that
CS/CF = R1/ R2). One feature of the first circuit is that a “T”
network is used to increase the effective resistance of RB and
improve the low frequency cutoff point by the same factor.
FREQUENCY – Hz
–100
0.01
DECIBELS
REFERENCED
T
O
1V/
Hz
–110
–120
–130
–140
–150
–160
–170
–180
–190
–200
–210
–220
0.1
1
10
100
1k
10k
100k
TOTAL
OUTPUT
NOISE
NOISE DUE TO
RB ALONE
NOISE DUE TO
IB ALONE
Figure 7. Noise at the Outputs of the Circuits of Figures 5
and 6. Gain = 10, CS = 3000 pF, RB = 22 M
However, this does not change the noise contribution of RB
which, in this example, dominates at low frequencies. The graph
of Figure 8 shows how to select an RB large enough to minimize
this resistor’s contribution to overall circuit noise. When the
equivalent current noise of RB (( 4 kT)/R) equals the noise of
I
B
2
qI
B
(),thereisdiminishingreturninmakingR
B larger.
INPUT BIAS CURRENT
5.2
1010
1pA
10nA
10pA
RESIST
ANCE
IN
100pA
1nA
5.2
109
5.2
108
5.2
107
5.2
106
Figure 8. Graph of Resistance vs. Input Bias Current
Where the Equivalent Noise
4 kT/R, Equals the Noise
of the Bias Current IB
2
qI
B
()
To maximize dc performance over temperature, the source
resistances should be balanced on each input of the amplifier.
This is represented by the optional resistor RB in Figures 5 and 6.
As previously mentioned, for best noise performance care should
be taken to also balance the source capacitance designated by
CB The value for CB in Figure 5 would be equal to CS in
Figure 6. At values of CB over 300 pF, there is a diminishing
impact on noise; capacitor CB can then be simply a large mylar
bypass capacitor of 0.01
F or greater.
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| AD745KR-16-REEL7 | 功能描述:IC OPAMP BIFET 20MHZ ULN 16SOIC RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:2,500 系列:Excalibur™ 放大器类型:J-FET 电路数:1 输出类型:- 转换速率:45 V/µs 增益带宽积:10MHz -3db带宽:- 电流 - 输入偏压:20pA 电压 - 输入偏移:490µV 电流 - 电源:1.7mA 电流 - 输出 / 通道:48mA 电压 - 电源，单路/双路(±):4.5 V ~ 38 V，±2.25 V ~ 19 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| AD745KRZ-16 | 功能描述:IC OPAMP BIFET 20MHZ ULN 16SOIC RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:2,500 系列:- 放大器类型:通用 电路数:4 输出类型:- 转换速率:0.6 V/µs 增益带宽积:1MHz -3db带宽:- 电流 - 输入偏压:45nA 电压 - 输入偏移:2000µV 电流 - 电源:1.4mA 电流 - 输出 / 通道:40mA 电压 - 电源，单路/双路(±):3 V ~ 32 V，±1.5 V ~ 16 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:14-TSSOP（0.173"，4.40mm 宽） 供应商设备封装:14-TSSOP 包装:带卷 (TR) 其它名称:LM324ADTBR2G-NDLM324ADTBR2GOSTR |
| AD745KRZ-16-REEL | 功能描述:IC OPAMP BIFET 20MHZ ULN 16SOIC RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:2,500 系列:Excalibur™ 放大器类型:J-FET 电路数:1 输出类型:- 转换速率:45 V/µs 增益带宽积:10MHz -3db带宽:- 电流 - 输入偏压:20pA 电压 - 输入偏移:490µV 电流 - 电源:1.7mA 电流 - 输出 / 通道:48mA 电压 - 电源，单路/双路(±):4.5 V ~ 38 V，±2.25 V ~ 19 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| AD745KRZ-16-REEL7 | 功能描述:IC OPAMP BIFET 20MHZ ULN 16SOIC RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:2,500 系列:Excalibur™ 放大器类型:J-FET 电路数:1 输出类型:- 转换速率:45 V/µs 增益带宽积:10MHz -3db带宽:- 电流 - 输入偏压:20pA 电压 - 输入偏移:490µV 电流 - 电源:1.7mA 电流 - 输出 / 通道:48mA 电压 - 电源，单路/双路(±):4.5 V ~ 38 V，±2.25 V ~ 19 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| ad745sq | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Analog Devices 功能描述: |
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