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参数资料
| 型号： | AD7669ARZ-REEL |
| 厂商： | Analog Devices Inc |
| 文件页数： | 15/20页 |
| 文件大小： | 0K |
| 描述： | IC I/O PORT 8BIT ANALOG 28SOIC |
| 标准包装： | 1,000 |
| 系列： | LC²MOS |
| 应用： | 模拟 I/O |
| 接口： | 总线 |
| 电源电压： | 4.75 V ~ 5.25 V |
| 封装/外壳： | 28-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 28-SOIC W |
| 包装： | 带卷 (TR) |
| 安装类型： | 表面贴装 |
AD7569/AD7669–TIMING CHARACTERISTICS1
Limit at
TMIN, TMAX
Parameter
25 C (All Grades)
(J, K, A, B Grades)
(S, T Grades)
Units
Test Conditions/Comments
DAC Timing
t1
80
90
ns min
WR
Pulse Width
t2
0
ns min
CS
, A/B to WR Setup Time
t3
0
ns min
CS
, A/B to WR Hold Time
t4
60
70
80
ns min
Data Valid to WR Setup Time
t5
10
ns min
Data Valid to WR Hold Time
ADC Timing
t6
50
ns min
ST
Pulse Width
t7
110
130
150
ns max
ST
to BUSY Delay
t8
20
30
ns max
BUSY
to INT Delay
t9
0
ns min
BUSY
to CS Delay
t10
0
ns min
CS
to RD Setup Time
t11
60
75
90
ns min
RD
Pulse Width Determined by t13.
t12
0
ns min
CS
to RD Hold Time
t13
2
60
75
90
ns max
Data Access Time after RD; CL = 20 pF
95
120
135
ns max
Data Access Time after RD; CL = 100 pF
t14
3
10
ns min
Bus Relinquish Time after RD
60
75
85
ns max
t15
65
75
85
ns max
RD
to INT Delay
t16
120
140
160
ns max
RD
to BUSY Delay
t17
2
60
75
90
ns max
Data Valid Time after BUSY; CL = 20 pF
90
115
135
ns max
Data Valid Time after BUSY; CL = 100 pF
NOTES
1Sample tested at +25
°C to ensure compliance. All input control signals are specified with t
R = tF = 5 ns (10% to 90% of +5 V) and timed from a voltage level of 1.6 V.
2t
13 and t17 are measured with the load circuits of Figure 1 and defined as the time required for an output to cross either 0.8 V or 2.4 V.
3t
l4 is defined as the time required for the data line to change 0.5 V when loaded with the circuit of Figure 2.
Specifications subject to change without notice.
REV. B
–4–
WARNING!
ESD SENSITIVE DEVICE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD7569/AD7669 features proprietary ESD protection circuitry, permanent dam-
age may occur on devices subjected to high energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS
VDD to AGNDDAC or AGNDADC . . . . . . . . . . . . . –0.3 V, +7 V
VDD to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +7 V
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +14 V
AGNDDAC or AGNDADC to DGND . . . . –0.3 V, VDD + 0.3 V
AGNDDAC to AGNDADC . . . . . . . . . . . . . . . . . . . . . . . . .
±5 V
Logic Voltage to DGND . . . . . . . . . . . . . –0.3 V, VDD + 0.3 V
CLK Input Voltage to DGND . . . . . . . . . –0.3 V, VDD + 0.3 V
VOUT (VOUTA, VOUTB) to
AGND
1
DAC
. . . . . . . . . . . . . . . . . VSS – 0.3 V, VDD + 0.3 V
VIN to AGNDADC . . . . . . . . . . . . . . . VSS – 0.3 V, VDD + 0.3 V
NOTE
1Output may be shorted to any voltage in the range V
SS to VDD provided that the
power dissipation of the package is not exceeded. Typical short circuit current for
a short to AGND or VSS is 50 mA.
Figure 1. Load Circuits for Data Access Time Test
a. High-Z to VOH
Figure 2. Load Circuits for Bus Relinquish Time Test
b. High-Z to VOL
a. VOH to High-Z
b. VOL to High-Z
Power Dissipation (Any Package) to +75
°C . . . . . . . . 450 mW
Derates above 75
°C by . . . . . . . . . . . . . . . . . . . . . 6 mW/°C
Operating Temperature Range
Commercial (J, K) . . . . . . . . . . . . . . . . . . . . . . 0
°C to +70°C
Industrial (A, B) . . . . . . . . . . . . . . . . . . . . . –40
°C to +85°C
Extended (S, T) . . . . . . . . . . . . . . . . . . . . –55
°C to +125°C
Storage Temperature Range . . . . . . . . . . . . –65
°C to +150°C
Lead Temperature (Soldering, 10 secs) . . . . . . . . . . . +300
°C
*Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only; functional operation
of the device at these or any other condition above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
(See Figures 8, 10, 12; VDD = 5 V
5%; VSS = 0 V or –5 V
5%)
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