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| 型号： | AD780CRZ-REEL7 |
| 厂商： | Analog Devices Inc |
| 文件页数： | 4/12页 |
| 文件大小： | 0K |
| 描述： | IC VREF SERIES SHUNT PREC 8-SOIC |
| 设计资源： | Using AD8599 as an Ultralow Distortion Driver for the AD7991 (CN0043) Using AD8599 as an Ultralow Distortion Driver for the AD7995 (CN0044) Using AD8599 as an Ultralow Distortion Driver for the AD7999 (CN0045) Using AD7328 in Appls with Single-Ended Industrial-Level Signals (CN0047) AD5382 Channel Monitor Function (CN0012) AD5383 Channel Monitor Function (CN0015) AD5390/91/92 Channel Monitor Function (CN0030) Measuring -48 V High-Side Current Using AD629, AD8603, AD780, and AD7453 (CN0100) High Voltage, High Precision Current Sensing with Output Level Shifting Using AD8210 and AD8274 (CN0116) |
| 标准包装： | 1,000 |
| 基准类型： | 串联，并联，可调节，精度 |
| 输出电压： | ±2.5V，±3V |
| 容差： | ±1.5mV |
| 温度系数： | 7ppm/°C |
| 输入电压： | 4 V ~ 36 V |
| 通道数： | 1 |
| 电流 - 静态： | 1mA |
| 电流 - 输出： | 10mA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 带卷 (TR) |
AD780
ABSOLUTE MAXIMUM RATINGS
Data Sheet
Table 2.
Parameter
+V IN to Ground
TRIM Pin to Ground
TEMP Pin to Ground
Power Dissipation (25°C)
Storage Temperature
Lead Temperature
(Soldering 10 sec)
Output Protection
Values
36 V
36 V
36 V
500 mW
?65°C to +150°C
300°C
Output safe for indefinite short to
GND
TEMP
+V IN
GND
ground and momentary short to V IN .
ESD Classification
Class 1 (1000 V)
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
TRIM
NOTES
V OUT
Figure 3. Die Layout
2.5V/3.0V
O/P SELECT
maximum specifications for extended periods may affect device
reliability.
Both V OUT pads should be connected to the output.
Die Thickness: The standard thickness of Analog Devices
bipolar dice is 24 mil ± 2 mil.
NC 1
+V IN 2
TEMP 3
AD780
TOP VIEW
8
7
6
2.5V/3.0V O/PSELECT
(NC OR GND)
NC
V OUT
Die Dimensions: The dimensions given have a tolerance of
±2 mil.
GND 4 (Not to Scale)
5
TRIM
Backing: The standard backside surface is silicon (not plated).
NC = NO CONNECT
Figure 2. Pin Configuration, 8-Lead PDIP and SOIC Packages
Analog Devices does not recommend gold-backed dice for most
applications.
Edges: A diamond saw is used to separate wafers into dice, thus
providing perpendicular edges halfway through the die. In
contrast to scribed dice, this technique provides a more uniform
die shape and size. The perpendicular edges facilitate handling
(such as tweezer pickup), while the uniform shape and size
simplify substrate design and die attach.
Top Surface: The standard top surface of the die is covered by a
layer of glassivation. All areas are covered except bonding pads
and scribe lines.
Surface Metallization: The metallization to Analog Devices
bipolar dice is aluminum. Minimum thickness is 10,000 ?.
Bonding Pads: All bonding pads have a minimum size of
4.0 mil by 6.0 mil. The passivation windows have a minimum
size of 3.6 mil by 5.6 mil.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. F | Page 4 of 12
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