参数资料
| 型号： | AD7810YR |
| 厂商： | Analog Devices Inc |
| 文件页数： | 5/11页 |
| 文件大小： | 0K |
| 描述： | IC ADC 10BIT 2.7V 8-SOIC |
| 产品变化通告： | Product Discontinuance 27/Oct/2011 |
| 标准包装： | 98 |
| 位数： | 10 |
| 采样率（每秒）： | 350k |
| 数据接口： | 串行 |
| 转换器数目： | 1 |
| 功率耗散（最大）： | 17.5mW |
| 电压电源： | 单电源 |
| 工作温度： | -40°C ~ 105°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 输入数目和类型： | 2 个伪差分，单极 |
AD7810
–3–
REV. B
Timing Characteristics
1, 2
Parameter
VDD = 5 V
10%
VDD = 3 V
10%
Unit
Conditions/Comments
t1
2.3
s (max)
Conversion Time Mode 1 Operation (High Speed Mode)
t2
20
ns (min)
CONVST Pulsewidth
t3
25
ns (min)
SCLK High Pulsewidth
t4
25
ns (min)
SCLK Low Pulsewidth
t5
3
5
ns (min)
CONVST Rising Edge to SCLK Rising Edge Set-Up Time
t6
3
10
ns (max)
SCLK Rising Edge to DOUT Data Valid Delay
t7
3
5
ns (max)
Data Hold Time after Rising Edge SCLK
t8
3, 4
20
ns (max)
Bus Relinquish Time after Falling Edge of SCLK
10
ns (min)
tPOWER UP
1.5
s (max)
Power-Up Time after Rising Edge of CONVST
NOTES
1Sample tested to ensure compliance.
2See Figures 14, 15 and 16.
3These numbers are measured with the load circuit of Figure 1. They are defined as the time required for the o/p to cross 0.8 V or 2.4 V for V
DD = 5 V
± 10% and
0.4 V or 2 V for VDD = 3 V
± 10%.
4Derived from the measured time taken by the data outputs to change 0.5 V when loaded with the circuit of Figure 1. The measured number is then extrapolated back
to remove the effects of charging or discharging the 50 pF capacitor. This means that the time, t8, quoted in the Timing Characteristics is the true bus relinquish time
of the part and as such is independent of external bus loading capacitances.
Specifications subject to change without notice.
(–40 C to +105 C, VREF = VDD, unless otherwise noted)
ABSOLUTE MAXIMUM RATINGS
*
(TA = 25
°C unless otherwise noted)
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Digital Input Voltage to GND
(CONVST, SCLK) . . . . . . . . . . . . . . –0.3 V, VDD + 0.3 V
Digital Output Voltage to GND
(DOUT) . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, VDD + 0.3 V
VREF to GND . . . . . . . . . . . . . . . . . . . . . . –0.3 V, VDD + 0.3 V
Analog Inputs
(VIN+, VIN–) . . . . . . . . . . . . . . . . . . . . –0.3 V, VDD + 0.3 V
Storage Temperature Range . . . . . . . . . . . . –65
°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 150
°C
Plastic DIP Package, Power Dissipation . . . . . . . . . . 450 mW
θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . 125°C/W
θJC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 50°C/W
Lead Temperature Soldering (10 sec) . . . . . . . . . . . 260
°C
IOL
200 A
IOH
200 A
1.6V
CL
50pF
TO
OUTPUT
PIN
Figure 1. Load Circuit for Digital Output Timing Specifications
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . 450 mW
θ
JA Thermal Impedance . . . . . . . . . . . . . . . . . . . .
160
°C/W
θJC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 56°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . 215
°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . 220
°C
MicroSOIC Package, Power Dissipation . . . . . . . . . . 450 mW
θ
JA Thermal Impedance . . . . . . . . . . . . . . . . . . . .
206
°C/W
θJC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 44°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . 215
°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . 220
°C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
ORDERING GUIDE
Linearity
Temperature
Package
Branding
Model
Error (LSB)
Range
Description
Options
Information
AD7810YN
±1 LSB
–40
°C to +105°C
Plastic DIP
N-8
AD7810YR
±1 LSB
–40
°C to +105°C
Small Outline IC (SOIC)
SO-8
AD7810YRM
±1 LSB
–40
°C to +105°C
microSOIC
RM-8
C1Y
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