参数资料
型号: AD8005ARZ-REEL7
厂商: Analog Devices Inc
文件页数: 12/16页
文件大小: 0K
描述: IC OPAMP CF ULP LDIST 10MA 8SOIC
标准包装: 1,000
放大器类型: 电流反馈
电路数: 1
转换速率: 1500 V/µs
-3db带宽: 270MHz
电流 - 输入偏压: 5µA
电压 - 输入偏移: 5000µV
电流 - 电源: 400µA
电流 - 输出 / 通道: 10mA
电压 - 电源,单路/双路(±): 4 V ~ 12 V,±2 V ~ 6 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 带卷 (TR)
Data Sheet
AD8005
Rev. B | Page 5 of 16
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
Supply Voltage
12.6 V
Internal Power Dissipation1
PDIP Package (N-8)
1.3 Watts
SOIC_N (R-8)
0.75 Watts
SOT-23 Package (RJ-5)
0.5 Watts
Input Voltage (Common Mode)
±VS ± 1 V
Differential Input Voltage
±3.5 V
Output Short Circuit Duration
Observe Power Derating Curves
Storage Temperature Range
–65°C to +125°C
Operating Temperature Range
–40°C to +85°C
Lead Temperature Range
(Soldering 10 sec)
+300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for device in free air.
Table 4. Thermal Resistance
Package Type
θJA
Unit
8-Lead PDIP Package
90
°C/W
8-Lead SOIC_N Package
155
°C/W
5-Lead SOT-23 Package
240
°C/W
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8005
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic, approximately +150°C. Exceeding this limit temporarily
causes a shift in parametric performance due to a change in the
stresses exerted on the die by the package. Exceeding a junction
temperature of +175°C for an extended period can result in
device failure.
While the AD8005 is internally short circuit protected, this is
not sufficient to guarantee that the maximum junction temper-
ature (+150°C) is not exceeded under all conditions. To ensure
proper operation, it is necessary to observe the maximum
power derating curves shown in Figure 5.
Figure 5. Maximum Power Dissipation vs. Temperature
ESD CAUTION
–50
–30
–10
1030507090
–40
–20
0
20406080
MA
XI
MU
M
PO
W
E
R
D
ISS
IP
A
T
IO
N
(W
)
AMBIENT TEMPERATURE (°C)
TJ = 150°C
2.0
1.5
1.0
0.5
0
8-LEAD PDIP PACKAGE
8-LEAD SOIC_N PACKAGES
5-LEAD SOT-23 PACKAGE
121
46-
005
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