参数资料
| 型号： | AD8007ARZ-RL |
| 厂商： | Analog Devices Inc |
| 文件页数： | 9/21页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP CF ULDIST LN LP 8SOIC |
| 标准包装： | 2,500 |
| 放大器类型： | 电流反馈 |
| 电路数： | 1 |
| 转换速率： | 1000 V/µs |
| -3db带宽： | 650MHz |
| 电流 - 输入偏压： | 4µA |
| 电压 - 输入偏移： | 500µV |
| 电流 - 电源： | 9mA |
| 电流 - 输出 / 通道： | 130mA |
| 电压 - 电源，单路/双路(±)： | 5 V ~ 12 V，±2.5 V ~ 6 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 带卷 (TR) |
AD8007/AD8008
Rev. E | Page 16 of
20
Whenever physical layout considerations prevent the decoupling
scheme shown in Figure 53, the user can connect one of the
high frequency decoupling capacitors directly across the supplies
and connect the other high frequency decoupling capacitor to
ground (see Figure 54).
+VS
–VS
RG
499
RS
200
IN
RF
499
OUT
AD8007
+
10F
C1
0.1F
C2
0.1F
02
86
6-
0
54
Figure 54. High Frequency Capacitors Connected Across the Supplies
(Recommended)
LAYOUT CONSIDERATIONS
The standard noninverting configuration with recommended
power supply bypassing is shown in Figure 54. The 0.1 μF high
frequency decoupling capacitors should be X7R or NPO chip
components. Connect C2 from the +VS pin to the VS pin.
Connect C1 from the +VS pin to signal ground.
The length of the high frequency bypass capacitor leads is critical.
Parasitic inductance due to long leads works against the low
impedance created by the bypass capacitor. The ground for the
load impedance should be at the same physical location as the
bypass capacitor grounds. For larger value capacitors, which are
intended to be effective at lower frequencies, the current return
path distance is less critical.
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