参数资料
| 型号： | AD8014ARZ |
| 厂商： | Analog Devices Inc |
| 文件页数： | 6/11页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP CF LP LN LDIST 8SOIC |
| 标准包装： | 98 |
| 放大器类型： | 电流反馈 |
| 电路数： | 1 |
| 转换速率： | 4600 V/µs |
| -3db带宽： | 480MHz |
| 电流 - 输入偏压： | 5µA |
| 电压 - 输入偏移： | 2000µV |
| 电流 - 电源： | 1.15mA |
| 电流 - 输出 / 通道： | 50mA |
| 电压 - 电源，单路/双路(±)： | 4.5 V ~ 12 V，±2.25 V ~ 6 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 769 (CN2011-ZH PDF) |
AD8014
–4–
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8014 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.6 V
Internal Power Dissipation2
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . 0.75 W
SOT-23-5 Package (RT) . . . . . . . . . . . . . . . . . . . . . . 0.5 W
Input Voltage Common Mode . . . . . . . . . . . . . . . . . . . . . .
±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . .
±2.5 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range . . . . . . . . . . . . –65
°C to +150°C
Operating Temperature Range . . . . . . . . . . . –40
°C to +85°C
Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . . +300
°C
ESD (Human Body Model) . . . . . . . . . . . . . . . . . . . . +1500 V
NOTES
1 Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only, functional operation of the
device at these or any other conditions above listed in the operational section of this
specification is not implied. Exposure to Absolute Maximum Ratings for any
extended periods may affect device reliability.
2 Specification is for device in free air at 25
°C.
8-Lead SOIC Package
θ
JA = 155
°C/W.
5-Lead SOT-23 Package
θ
JA = 240
°C/W.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8014
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic. This is approximately +150
°C. Even temporarily ex-
ceeding this limit may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the pack-
age. Exceeding a junction temperature of +175
°C may result in
device failure.
The output stage of the AD8014 is designed for large load cur-
rent capability. As a result, shorting the output to ground or to
power supply sources may result in a very large power dissipa-
tion. To ensure proper operation it is necessary to observe the
maximum power derating tables.
Table I. Maximum Power Dissipation vs. Temperature
Ambient Temp
Power Watts
C
SOT-23-5
SOIC
–40
0.79
1.19
–20
0.71
1.06
0
0.63
0.94
+20
0.54
0.81
+40
0.46
0.69
+60
0.38
0.56
+80
0.29
0.44
+100
0.21
0.31
Rev. C
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