参数资料
| 型号： | AD8021AR |
| 厂商： | Analog Devices Inc |
| 文件页数： | 28/29页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP VF LN LP LDIST 8SOIC |
| 设计资源： | Driving the AD7366/7 Bipolar SAR ADC in Low-Distortion DC-Coupled Appls (CN0042) |
| 标准包装： | 98 |
| 放大器类型： | 电压反馈 |
| 电路数： | 1 |
| 转换速率： | 460 V/µs |
| -3db带宽： | 560MHz |
| 电流 - 输入偏压： | 7.5µA |
| 电压 - 输入偏移： | 400µV |
| 电流 - 电源： | 7.8mA |
| 电流 - 输出 / 通道： | 70mA |
| 电压 - 电源，单路/双路(±)： | 4.5 V ~ 24 V，±2.25 V ~ 12 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 管件 |
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AD8021
Rev. F | Page 7 of 28
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Rating
Supply Voltage
26.4 V
Power Dissipation
Observed power
derating curves
Input Voltage (Common Mode)
±VS ± 1 V
Differential Input Voltage1
±0.8 V
Differential Input Current
±10 mA
Output Short-Circuit Duration
Observed power
derating curves
Storage Temperature Range
65°C to +125°C
Operating Temperature Range
40°C to +85°C
Lead Temperature (Soldering, 10 sec)
300°C
1 The AD8021 inputs are protected by diodes. Current-limiting resistors are
not used to preserve the low noise. If a differential input exceeds ±0.8 V, the
input current should be limited to ±10 mA.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8021 is limited by the associated rise in junction tempera-
ture. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition
temperature of the plastic, approximately 150°C. Temporarily
exceeding this limit can cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of 175°C for an extended
period can result in device failure.
While the AD8021 is internally short-circuit protected, this can
not be sufficient to guarantee that the maximum junction tem-
perature (150°C) is not exceeded under all conditions. To ensure
proper operation, it is necessary to observe the maximum
power derating curves.
AMBIENT TEMPERATURE (°C)
M
A
X
IM
UM
P
O
W
E
R
DI
S
IP
AT
IO
N
(
W
)
2.0
1.5
1.0
0.5
0.01
–55 –45 –35 –25 –15 –5 5 15 25 35 45 55 65 75 85
8-LEAD SOIC
8-LEAD MSOP
0
188
8-
0
04
Figure 3. Maximum Power Dissipation vs. Temperature1
1 Specification is for device in free air: 8-lead SOIC: θJA = 125°C/W; 8-lead
MSOP:
θJA = 145°C/W.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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