参数资料
| 型号： | AD8032ANZ |
| 厂商： | Analog Devices Inc |
| 文件页数： | 17/20页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP VF R-R DUAL LP 8DIP |
| 标准包装： | 50 |
| 放大器类型： | 电压反馈 |
| 电路数： | 2 |
| 输出类型： | 满摆幅 |
| 转换速率： | 35 V/µs |
| -3db带宽： | 80MHz |
| 电流 - 输入偏压： | 450nA |
| 电压 - 输入偏移： | 1000µV |
| 电流 - 电源： | 900µA |
| 电流 - 输出 / 通道： | 15mA |
| 电压 - 电源，单路/双路(±)： | 2.7 V ~ 12 V，±1.35 V ~ 6 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
| 产品目录页面： | 769 (CN2011-ZH PDF) |
AD8031/AD8032
Data Sheet
Rev. G | Page 6 of 20
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Rating
Supply Voltage
12.6 V
Internal Power Dissipation1
8-Lead PDIP (N)
1.3 W
8-Lead SOIC_N (R)
0.8 W
8-Lead MSOP (RM)
0.6 W
5-Lead SOT-23 (RJ)
0.5 W
Input Voltage (Common Mode)
±VS ± 0.5 V
Differential Input Voltage
±3.4 V
Output Short-Circuit Duration
Observe Power
Derating Curves
Storage Temperature Range (N, R, RM, RJ)
65°C to +125°C
Lead Temperature (Soldering 10 sec)
300°C
1
Specification is for the device in free air:
8-Lead PDIP: θJA = 90°C/W.
8-Lead SOIC_N: θJA = 155°C/W.
8-Lead MSOP: θJA = 200°C/W.
5-Lead SOT-23: θJA = 240°C/W.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
temperature. The maximum safe junction temperature for
plastic encapsulated devices is determined by the glass
transition temperature of the plastic, approximately 150°C.
Exceeding this limit temporarily can cause a shift in parametric
performance due to a change in the stresses exerted on the die
by the package. Exceeding a junction temperature of 175°C for
an extended period can result in device failure.
While the AD8031/AD8032 are internally short-circuit
protected, this may not be sufficient to guarantee that the
maximum junction temperature (150°C) is not exceeded under
all conditions. To ensure proper operation, it is necessary to
observe the maximum power derating curves shown in Figure 7.
2.0
1.5
0
MA
XI
MU
M
PO
W
ER
D
ISSI
PA
T
IO
N
(W
)
1.0
0.5
5-LEAD SOT-23
TJ = +150°C
8-LEAD PDIP
8-LEAD SOIC
AMBIENT TEMPERATURE (°C)
8-LEAD MSOP
–50 –40 –30 –20 –10
0
10
20
30
40
50
60
70
80
90
01056-
007
Figure 7. Maximum Power Dissipation vs. Temperature
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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