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| 型号： | AD8051ARTZ-REEL7 |
| 厂商： | Analog Devices Inc |
| 文件页数： | 2/25页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP VF R-R LDIST LP SOT23-5 |
| 标准包装： | 1 |
| 放大器类型： | 电压反馈 |
| 电路数： | 1 |
| 输出类型： | 满摆幅 |
| 转换速率： | 170 V/µs |
| -3db带宽： | 110MHz |
| 电流 - 输入偏压： | 1.4µA |
| 电压 - 输入偏移： | 1800µV |
| 电流 - 电源： | 4.8mA |
| 电流 - 输出 / 通道： | 45mA |
| 电压 - 电源，单路/双路(±)： | 3 V ~ 12 V，±1.5 V ~ 6 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74A，SOT-753 |
| 供应商设备封装： | SOT-23-5 |
| 包装： | 标准包装 |
| 产品目录页面： | 769 (CN2011-ZH PDF) |
| 其它名称： | AD8051ARTZ-REEL7DKR |
AD8051/AD8052/AD8054
Rev. J | Page 9 of 24
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Ratings
Supply Voltage
12.6 V
Internal Power Dissipation1
SOIC Packages
Observe power
derating curves
SOT-23 Package
Observe power
derating curves
MSOP Package
Observe power
derating curves
TSSOP Package
Observe power
derating curves
Input Voltage (Common Mode)
±VS
Differential Input Voltage
±2.5 V
Output Short-Circuit Duration
Observe power
derating curves
Storage Temperature Range (R)
65°C to +150°C
Operating Temperature Range (A Grade)
40°C to +125°C
Lead Temperature (Soldering 10 sec)
300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
Specification is for device in free air.
Table 5. Thermal Resistance
Package Type
θJA
Unit
8-Lead SOIC
125
°C/W
5-Lead SOT-23
180
°C/W
8-Lead MSOP
150
°C/W
14-Lead SOIC
90
°C/W
14-Lead TSSOP
120
°C/W
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8051/AD8052/AD8054 is limited by the associated rise in
junction temperature. The maximum safe junction temperature
for plastic encapsulated devices is determined by the glass
transition temperature of the plastic, approximately 150°C.
Temporarily exceeding this limit can cause a shift in parametric
performance due to a change in the stresses exerted on the die
by the package. Exceeding a junction temperature of 175°C for
an extended period can result in device failure.
While the AD8051/AD8052/AD8054 are internally short-
circuit protected, this cannot be sufficient to guarantee that the
maximum junction temperature (150°C) is not exceeded under
all conditions. To ensure proper operation, it is necessary to
observe the maximum power derating curves.
AMBIENT TEMPERATURE (°C)
–55
0
2.0
1.5
1.0
0.5
5
M
AX
IM
UM
P
O
W
E
R
DI
S
IP
AT
IO
N
(W
)
2.5
MSOP-8
SOIC-8
SOT-23-5
SOIC-14
TSSOP-14
–35
–15
15
35
55
75
95
115
01
06
2-
0
06
Figure 6. Maximum Power Dissipation vs.
Temperature for AD8051/AD8052/AD8054
ESD CAUTION
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