参数资料
| 型号： | AD8062ARM |
| 厂商： | Analog Devices Inc |
| 文件页数： | 17/20页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP VF R-R DUAL LP 8MSOP |
| 标准包装： | 50 |
| 放大器类型： | 电压反馈 |
| 电路数： | 2 |
| 输出类型： | 满摆幅 |
| 转换速率： | 650 V/µs |
| -3db带宽： | 320MHz |
| 电流 - 输入偏压： | 3.5µA |
| 电压 - 输入偏移： | 1000µV |
| 电流 - 电源： | 6.8mA |
| 电流 - 输出 / 通道： | 50mA |
| 电压 - 电源，单路/双路(±)： | 2.7 V ~ 8 V，±1.35 V ~ 4 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 8-MSOP |
| 包装： | 管件 |
AD8061/AD8062/AD8063
Data Sheet
Rev. J | Page 6 of 20
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Rating
Supply Voltage
8 V
Internal Power Dissipation1
8-lead SOIC (R)
0.8 W
5-lead SOT-23 (RJ)
0.5 W
6-lead SOT-23 (RJ)
0.5 W
8-lead MSOP (RM)
0.6 W
Input Voltage (Common-Mode)
(VS 0.2 V) to (+VS + 0.2 V)
Differential Input Voltage
±VS
Output Short-Circuit Duration
Observe power derating curves
Storage Temperature Range
R-8, RM-8, SOT-23-5, SOT-23-6
65°C to +125°C
Operating Temperature Range
40°C to +85°C
Lead Temperature (Soldering,
10 sec)
300°C
1
Specification is for device in free air.
8-Lead SOIC_N: θJA = 160°C/W; θJC = 56°C/W.
5-Lead SOT-23: θJA = 240°C/W; θJC = 92°C/W.
6-Lead SOT-23: θJA = 230°C/W; θJC = 92°C/W.
8-Lead MSOP: θJA = 200°C/W; θJC = 44°C/W.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8061/AD8062/AD8063 is limited by the associated rise in
junction temperature. The maximum safe junction temperature
for plastic encapsulated devices is determined by the glass
transition temperature of the plastic, approximately 150°C.
Temporarily exceeding this limit may cause a shift in parametric
performance due to a change in the stresses exerted on the die
by the package. Exceeding a junction temperature of 175°C for
an extended period can result in device failure. While the
AD8061/AD8062/AD8063 is internally short-circuit protected,
this may not be sufficient to guarantee that the maximum
junction temperature (150°C) is not exceeded under all
conditions.
To ensure proper operation, it is necessary to observe the
maximum power derating curves.
AMBIENT TEMPERATURE
(°C)
2.0
1.0
0
–50 –40
MA
XI
MU
M
PO
W
ER
D
ISSI
PA
TION
(
W)
–30
70
80
90
1.5
0.5
60
50
40
30
0
–10
–20
20
10
TJ = 150°C
MSOP
SOT-23-5, SOT-23-6
8-LEAD SOIC
PACKAGE
01065-
006
Figure 6. Maximum Power Dissipation vs. Temperature for
AD8061/AD8062/AD8063
ESD CAUTION
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