参数资料
| 型号： | AD8066ARMZ |
| 厂商： | Analog Devices Inc |
| 文件页数： | 2/29页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP VF R-R DUAL LN LP 8MSOP |
| 设计资源： | Precision, Bipolar Configuration for the AD5426/32/43 8-Bit to12-Bit DACs (CN0036) Precision, Bipolar, Configuration for AD5450/1/2/3 8-14bit Multiplying DACs (CN0053) |
| 标准包装： | 50 |
| 系列： | FastFET™ |
| 放大器类型： | 电压反馈 |
| 电路数： | 2 |
| 输出类型： | 满摆幅 |
| 转换速率： | 180 V/µs |
| -3db带宽： | 145MHz |
| 电流 - 输入偏压： | 3pA |
| 电压 - 输入偏移： | 400µV |
| 电流 - 电源： | 6.6mA |
| 电流 - 输出 / 通道： | 30mA |
| 电压 - 电源，单路/双路(±)： | 5 V ~ 24 V，±2.5 V ~ 12 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 8-MSOP |
| 包装： | 管件 |
| 产品目录页面： | 770 (CN2011-ZH PDF) |
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AD8065/AD8066
Rev. J | Page 9 of 28
ABSOLUTE MAXIMUM RATINGS
RMS output voltages should be considered. If RL is referenced to
VS, as in single-supply operation, then the total drive power is
VS × IOUT.
Table 4.
Parameter
Rating
Supply Voltage
26.4 V
Power Dissipation
See Figure 3
Common-Mode Input Voltage
VEE 0.5 V to VCC + 0.5 V
Differential Input Voltage
1.8 V
Storage Temperature Range
65°C to +125°C
Operating Temperature Range
40°C to +85°C
AD8065WARTZ Only
40°C to +105°C
Lead Temperature
(Soldering, 10 sec)
300°C
If the rms signal levels are indeterminate, then consider the
worst case, when VOUT = VS/4 for RL to midsupply.
() ()
L
S
D
R
V
I
V
P
2
4
/
+
×
=
In single-supply operation with RL referenced to VS, worst case
is VOUT = VS/2.
M
A
XIM
U
M
POWER
D
ISSIPA
TION
(
W
)
0
0.5
1.0
1.5
2.0
20
0
–40
–20
–60
40
60
80
100
AMBIENT TEMPERATURE (°C)
02916-E
-003
MSOP-8
SOIC-8
SOT-23-5
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the AD8065/AD8066
packages is limited by the associated rise in junction temperature
(TJ) on the die. The plastic encapsulating the die locally reaches
the junction temperature. At approximately 150°C, which is the
glass transition temperature, the plastic changes its properties.
Even temporarily exceeding this temperature limit can change
the stresses that the package exerts on the die, permanently
shifting the parametric performance of the AD8065/AD8066.
Exceeding a junction temperature of 175°C for an extended
time can result in changes in the silicon devices, potentially
causing failure.
Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
Airflow increases heat dissipation, effectively reducing θJA. Also,
more metal directly in contact with the package leads from
metal traces, through holes, ground, and power planes reduce
the θJA. Care must be taken to minimize parasitic capacitances
at the input leads of high speed op amps as discussed in the
The still air thermal properties of the package and PCB (θJA),
ambient temperature (TA), and total power dissipated in the
package (PD) determine the junction temperature of the die.
The junction temperature can be calculated by
Figure 3 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the SOIC (125°C/W),
SOT-23 (180°C/W), and MSOP (150°C/W) packages on a
JEDEC standard 4-layer board. θJA values are approximations.
TJ = TA + (PD × θJA)
OUTPUT SHORT CIRCUIT
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. The quiescent
power is the voltage between the supply pins (VS) times the
quiescent current (IS). Assuming the load (RL) is referenced to
midsupply, then the total drive power is VS /2 × IOUT, some of
which is dissipated in the package and some in the load (VOUT ×
IOUT). The difference between the total drive power and the load
power is the drive power dissipated in the package.
Shorting the output to ground or drawing excessive current for
the AD8065/AD8066 will likely cause catastrophic failure.
ESD CAUTION
(
)
Power
Load
Power
Drive
Total
Power
Quiescent
PD
+
=
()
L
OUT
L
OUT
S
D
R
V
R
V
I
V
P
2
×
+
×
=
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相关代理商/技术参数 |
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|---|---|
| AD8066ARMZ | 制造商:Analog Devices 功能描述:Operational Amplifier (Op-Amp) IC |
| AD8066ARMZ-REEL7 | 功能描述:IC OPAMP VF R-R DUAL LN LP 8MSOP RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:FastFET™ 标准包装:100 系列:- 放大器类型:通用 电路数:1 输出类型:- 转换速率:0.2 V/µs 增益带宽积:- -3db带宽:- 电流 - 输入偏压:100pA 电压 - 输入偏移:30µV 电流 - 电源:380µA 电流 - 输出 / 通道:- 电压 - 电源，单路/双路(±):±2 V ~ 18 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SO 包装:管件 |
| AD8066AR-REEL | 制造商:Analog Devices 功能描述:OP Amp Dual Volt Fdbk R-R O/P ±12V/24V 8-Pin SOIC N T/R 制造商:Rochester Electronics LLC 功能描述:SOIC DUAL HI PERF HI SPEED FET AMPLIFIER - Tape and Reel |
| AD8066AR-REEL7 | 功能描述:IC OPAMP VF R-R DUAL LN LP 8SOIC RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:FastFET™ 标准包装:1 系列:- 放大器类型:通用 电路数:4 输出类型:满摆幅 转换速率:0.028 V/µs 增益带宽积:105kHz -3db带宽:- 电流 - 输入偏压:3nA 电压 - 输入偏移:100µV 电流 - 电源:3.3µA 电流 - 输出 / 通道:12mA 电压 - 电源，单路/双路(±):2.7 V ~ 12 V，±1.35 V ~ 6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:14-TSSOP（0.173"，4.40mm 宽） 供应商设备封装:14-TSSOP 包装:剪切带 (CT) 其它名称:OP481GRUZ-REELCT |
| AD8066ARZ | 功能描述:IC OPAMP VF R-R DUAL LN LP 8SOIC RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:FastFET™ 标准包装:2,500 系列:- 放大器类型:通用 电路数:4 输出类型:- 转换速率:0.6 V/µs 增益带宽积:1MHz -3db带宽:- 电流 - 输入偏压:45nA 电压 - 输入偏移:2000µV 电流 - 电源:1.4mA 电流 - 输出 / 通道:40mA 电压 - 电源，单路/双路(±):3 V ~ 32 V，±1.5 V ~ 16 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:14-TSSOP（0.173"，4.40mm 宽） 供应商设备封装:14-TSSOP 包装:带卷 (TR) 其它名称:LM324ADTBR2G-NDLM324ADTBR2GOSTR |
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