参数资料
型号: AD8067ART-R2
厂商: Analog Devices Inc
文件页数: 11/25页
文件大小: 0K
描述: IC OPAMP VF R-R PREC LN SOT23-5
标准包装: 1
系列: FastFET™
放大器类型: 电压反馈
电路数: 1
输出类型: 满摆幅
转换速率: 640 V/µs
-3db带宽: 54MHz
电流 - 输入偏压: 0.6pA
电压 - 输入偏移: 200µV
电流 - 电源: 6.6mA
电流 - 输出 / 通道: 26mA
电压 - 电源,单路/双路(±): 5 V ~ 24 V,±2.5 V ~ 12 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: SC-74A,SOT-753
供应商设备封装: SOT-23-5
包装: 剪切带 (CT)
其它名称: AD8067ART-R2CT
AD8067
Data Sheet
Rev. B | Page 18 of 24
APPLICATIONS
WIDEBAND PHOTODIODE PREAMP
+
VOUT
VB
CF + CS
CD
CM
RF
AD8067
RSH = 10
11
CS
IPHOTO
CF
RF
Figure 49. Wideband Photodiode Preamp
Figure 49 shows an I/V converter with an electrical model of a
photodiode.
The basic transfer function is
F
PHOTO
OUT
R
sC
R
I
V
+
×
=
1
where IPHOTO is the output current of the photodiode, and the
parallel combination of RF and CF sets the signal bandwidth.
The stable bandwidth attainable with this preamp is a function
of RF, the gain bandwidth product of the amplifier, and the total
capacitance at the amplifier’s summing junction, including CS
and the amplifier input capacitance. RF and the total capacitance
produce a pole in the amplifier’s loop transmission that can
result in peaking and instability. Adding CF creates a zero in the
loop transmission that compensates for the pole’s effect and
reduces the signal bandwidth. It can be shown that the signal
bandwidth resulting in a 45° phase margin (f(45)) is defined by
( )
S
F
45
C
R
GBP
f
×
=
π
2
GBP is the unit gain bandwidth product, RF is the feedback
resistance, and CS is the total capacitance at the amplifier
summing junction (amplifier + photodiode + board parasitics).
The value of CF that produces f(45) can be shown to be
GBP
R
C
F
S
F
×
=
π
2
The frequency response in this case shows about 2 dB of
peaking and 15% overshoot. Doubling CF and cutting the
bandwidth in half results in a flat frequency response, with
about 5% transient overshoot.
The preamp’s output noise over frequency is shown in Figure 50.
Table 6. RMS Noise Contributions of Photodiode Preamp
Contributor
Expression
RMS
Noise
(V)1
RF × 2
57
1
2
f
R
kT
4
2
F
.
×
152
Amp to f1
1
f
VNOISE ×
4.3
Amp (f2 f1)
(
)
1
f
2
f
C
2
C
V
F
D
F
M
S
NOISE
×
+
×
96
Amp (Past f2)
(
)
57
1
3
f
C
2
C
V
F
D
F
M
S
NOISE
.
×
+
×
684
RSS Total
708
1
RMS noise with RF = 50 k, CS = 0.67 pF, CF = 0.33 pF, CM = 1.5 pF, and CD = 2.5 pF.
FREQUENCY – Hz
VOLTAGE
NOISE
nV/
Hz
RF NOISE
f1
NOISE DUE TO AMPLIFIER
VEN
f2
1
2πRF(CF + CS + CM + 2C D)
f1 =
f2 =
1
2πRFCF
f3 =
GBP
(CS + CM + 2C D + CF)/CF
VEN (C F + CS + CM + 2C D)/CF
f3
Figure 50. Photodiode Voltage Noise Contributions
Figure 51 shows the AD8067 configured as a transimpedance
photodiode amplifier. The amplifier is used in conjunction with
a JDS uniphase photodiode detector. This amplifier has a
bandwidth of 9.6 MHz, as shown in Figure 52, and is verified by
the design equations shown in Figure 50.
AD8067
0.1
F
10
F
+5V
49.9k
50
49.9k
0.33pF
VOUT
0.1
F
10
F
–5V
EPM 605 LL
–5V
0.33pF
NOTES
ID @ –5V = 0.074nA
CD @ –5V = 0.690pF
RB @ 1550nm = –49dB
Figure 51. Photodiode Preamplifier
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