参数资料
| 型号： | AD8112JSTZ |
| 厂商： | Analog Devices Inc |
| 文件页数： | 26/28页 |
| 文件大小： | 0K |
| 描述： | IC CROSSPOINT SWIT 16X8 100LQFP |
| 标准包装： | 1 |
| 功能： | 音频、视频交点开关 |
| 电路： | 1 x 16:8 |
| 电压电源： | 单/双电源 |
| 电压 - 电源，单路/双路(±)： | 4.5 V ~ 5.5 V，±2.25 V ~ 6.3 V |
| 电流 - 电源： | 50mA |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 100-LQFP |
| 供应商设备封装： | 100-LQFP（14x14） |
| 包装： | 托盘 |
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AD8112
Rev. 0 | Page 7 of 28
ABSOLUTE MAXIMUM RATINGS
Table 6.
Parameter
Rating
Analog Supply Voltage (AVCC to AVEE)
26.0 V
Digital Supply Voltage (DVCC to DGND)
6 V
Ground Potential Difference (AGND to DGND)
±0.5 V
Internal Power Dissipation1
3.1 W
Analog Input Voltage2
Maintain linear output
Digital Input Voltage
DVCC
Output Voltage (Disabled Output)
(AVCC 1.5 V) to
(AVEE + 1.5 V)
Output Short-Circuit Duration
Momentary
Storage Temperature Range
65°C to +125°C
Lead Temperature (Soldering 10 sec)
300°C
1 Specification is for device in free air (TA = 25°C):
100-lead plastic LQFP (ST): θJA = 40°C/W.
2 To avoid differential input breakdown, ensure that one-half the output
voltage (1/2 VOUT) and any input voltage is less than 10 V of the potential
differential. See Output Voltage Swing specification for linear output range.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
POWER DISSIPATION
The AD8112 is operated with ±5 V to ±12 V supplies and can
drive loads down to 150 Ω (±5 V) or 600 Ω (±12 V), resulting
in a large range of possible power dissipations. For this reason,
extra care must be taken when derating the operating conditions
based on ambient temperature.
Packaged in a 100-lead LQFP, the AD8112 junction-to-ambient
thermal impedance (θJA) is 40°C/W. For long-term reliability,
the maximum allowed junction temperature of the plastic encap-
sulated die should not exceed 150°C. Temporarily exceeding
this limit may cause a shift in parametric performance due
to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of 175°C for an extended
period can result in device failure. The curve in Figure 4 shows
the range of allowed power dissipations that meet these conditions
over the commercial range of ambient temperatures.
4.0
MA
X
IMU
M
P
O
W
E
R
(W
) 3.5
2.0
3.0
2.5
AMBIENT TEMPERATURE (°C)
0
10
203040
5060
70
TJ = 150°C
06
523
-00
4
Figure 4. Maximum Power Dissipation vs. Ambient Temperature
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