参数资料
| 型号： | AD8118ABPZ |
| 厂商： | Analog Devices Inc |
| 文件页数： | 34/36页 |
| 文件大小： | 0K |
| 描述： | IC CROSSPOINT SWIT 32X32 304BGA |
| 标准包装： | 1 |
| 功能： | 交叉点开关 |
| 电路： | 1 x 32:32 |
| 电压电源： | 单/双电源 |
| 电压 - 电源，单路/双路(±)： | 4.5 V ~ 5.5 V，±2.5V |
| 电流 - 电源： | 500mA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 304-BGA 裸露焊盘 |
| 供应商设备封装： | 304-BGA（31x31） |
| 包装： | 散装 |
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AD8117/AD8118
Rev. A | Page 7 of 36
ABSOLUTE MAXIMUM RATINGS
Table 6.
Parameter
Rating
Analog Supply Voltage (VPOS – VNEG)
6 V
Digital Supply Voltage (VDD – DGND)
6 V
Ground Potential Difference
(VNEG – DGND)
+0.5 V to 2.5 V
Maximum Potential Difference
(VDD – VNEG)
8 V
Common-Mode Analog Input
Voltage
VNEG to VPOS
Differential Analog Input Voltage
±2 V
Digital Input Voltage
VDD
Output Voltage
(Disabled Analog Output)
(VPOS 1 V) to (VNEG + 1 V)
Output Short-Circuit Duration
Momentary
Output Short-Circuit Current
80 mA
Storage Temperature
65°C to +125°C
Operating Temperature Range
40°C to +85°C
Lead Temperature
(Soldering 10 sec)
300°C
Junction Temperature
150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θ
JA
is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 7. Thermal Resistance
Package Type
θJA
θJC
θJB
ψJT
ψJB
Unit
304-Ball BGA
14
1
6.5
0.6
5.7
°C/W
POWER DISSIPATION
The AD8117/AD8118 are operated with ±2.5 V or +5 V
supplies and can drive loads down to 100 Ω, resulting in a large
range of possible power dissipations. For this reason, extra care
must be taken derating the operating conditions based on
ambient temperature.
Packaged in a 304-ball BGA, the AD8117/AD8118 junction-to-
ambient thermal impedance (θJA) is 14°C/W. For long-term
reliability, the maximum allowed junction temperature of the
die should not exceed 150°C. Temporarily exceeding this limit
may cause a shift in parametric performance due to a change in
stresses exerted on the die by the package. Exceeding a junction
temperature of 175°C for an extended period can result in
device failure. The following curve shows the range of allowed
internal die power dissipations that meet these conditions over
the 40°C to +85°C ambient temperature range. When using
the table, do not include external load power in the maximum
power calculation, but do include load current dropped on the
die output transistors.
8
4
15
85
MA
X
IMU
M
P
O
W
E
R
(W
)
AMBIENT TEMPERATURE (°C)
TJ = 150°C
7
6
5
25
35
45
55
65
75
06
36
5-
0
04
Figure 4. Maximum Die Power Dissipation vs. Ambient Temperature
ESD CAUTION
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