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| 型号： | AD8129ARMZ-REEL7 |
| 厂商： | Analog Devices Inc |
| 文件页数： | 2/41页 |
| 文件大小： | 0K |
| 描述： | IC AMP DIFF LN LDIST 40MA 8MSOP |
| 标准包装： | 1,000 |
| 放大器类型： | 差分 |
| 电路数： | 1 |
| 转换速率： | 1070 V/µs |
| -3db带宽： | 200MHz |
| 电流 - 输入偏压： | 500nA |
| 电压 - 输入偏移： | 200µV |
| 电流 - 电源： | 13mA |
| 电流 - 输出 / 通道： | 40mA |
| 电压 - 电源，单路/双路(±)： | 4.5 V ~ 25.2 V，±2.25 V ~ 12.6 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 8-MSOP |
| 包装： | 带卷 (TR) |
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AD8129/AD8130
Rev. C | Page 9 of 40
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Rating
Supply Voltage
26.4 V
Power Dissipation
Refer to Figure 4
Input Voltage (Any Input)
VS 0.3 V to +VS + 0.3 V
Differential Input Voltage (AD8129)
VS ≥ ±11.5 V
±0.5 V
Differential Input Voltage (AD8129)
VS < ±11.5 V
±6.2 V
Differential Input Voltage (AD8130)
±8.4 V
Storage Temperature Range
65°C to +150°C
Lead Temperature (Soldering, 10 sec)
300°C
Junction Temperature
150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, θJA is
specified for the device soldered in a circuit board in still air.
Table 5. Thermal Resistance
Package Type
θJA
Unit
8-Lead SOIC/4-Layer
121
°C/W
8-Lead MSOP/4-Layer
142
°C/W
Maximum Power Dissipation
The maximum safe power dissipation in the AD8129/AD8130
packages is limited by the associated rise in junction temp-
erature (TJ) on the die. At approximately 150°C, which is the
glass transition temperature, the plastic changes its properties.
Even temporarily exceeding this temperature limit can change
the stresses that the package exerts on the die, permanently
shifting the parametric performance of the AD8129/AD8130.
Exceeding a junction temperature of 150°C for an extended
period can result in changes in the silicon devices, potentially
causing failure.
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive. The quiescent power is the
voltage between the supply pins (VS) times the quiescent
current (IS). The power dissipated due to the load drive
depends upon the particular application. The power due to
load drive is calculated by multiplying the load current by the
associated voltage drop across the device. RMS voltages and
currents must be used in these calculations.
Airflow reduces θJA. In addition, more metal directly in contact
with the package leads from metal traces through holes, ground,
and power planes reduces the θJA.
Figure 4 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the 8-lead SOIC
(121°C/W) and MSOP (θJA = 142°C/W) packages on a JEDEC
standard 4-layer board. θJA values are approximations.
AMBIENT TEMPERATURE (°C)
M
A
XIM
U
M
POW
E
R
D
ISSIPA
TION
(
W
)
1.75
1.50
1.00
1.25
0.50
0.25
0.75
0
–40 –30 –20 –10 0
10 20 30 40 50 60 70 80 90 100 110 120
SOIC
MSOP
02464-005
Figure 4. Maximum Power Dissipation vs. Temperature
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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