参数资料
型号: AD8226BRZ-R7
厂商: Analog Devices Inc
文件页数: 24/28页
文件大小: 0K
描述: IC INSTR AMP RRO +/-18 8SOIC
标准包装: 1,000
放大器类型: 仪表
电路数: 1
输出类型: 满摆幅
转换速率: 0.6 V/µs
-3db带宽: 1.5MHz
电流 - 输入偏压: 20nA
电压 - 输入偏移: 100µV
电流 - 电源: 350µA
电流 - 输出 / 通道: 13mA
电压 - 电源,单路/双路(±): 2.2 V ~ 36 V,±1.35 V ~ 18 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 带卷 (TR)
Data Sheet
AD8226
Rev. C | Page 5 of 28
+VS = 2.7 V, VS = 0 V, VREF = 0 V, TA = 25°C, G = 1, RL = 10 kΩ, specifications referred to input, unless otherwise noted.
Table 3.
ARZ, ARMZ
BRZ, BRMZ
Parameter
Conditions
Min
Typ
Max
Min
Typ
Max
Unit
COMMON-MODE REJECTION RATIO (CMRR)
VCM = 0 V to 1.7 V
CMRR, DC to 60 Hz
G = 1
86
90
dB
G = 10
106
dB
G = 100
120
dB
G = 1000
120
dB
CMRR at 5 kHz
G = 1
80
dB
G = 10
90
dB
G = 100
90
dB
G = 1000
100
dB
NOISE
Total noise: eN = √(eNI2 + (eNO/G)2)
Voltage Noise
1 kHz
Input Voltage Noise, eNI
22
24
22
24
nV/√Hz
Output Voltage Noise, eNO
120
125
120
125
nV/√Hz
RTI
f = 0.1 Hz to 10 Hz
G = 1
2.0
V p-p
G = 10
0.5
V p-p
G = 100 to 1000
0.4
V p-p
Current Noise
f = 1 kHz
100
fA/√Hz
f = 0.1 Hz to 10 Hz
3
pA p-p
VOLTAGE OFFSET
Total offset voltage: VOS = VOSI + (VOSO/G)
Input Offset, VOSI
100
50
V
Average Temperature Coefficient
TA = 40°C to +125°C
0.5
2
0.5
1
V/°C
Output Offset, VOSO
600
400
V
Average Temperature Coefficient
TA = 40°C to +125°C
2
10
1
5
V/°C
Offset RTI vs. Supply (PSR)
VS = 0 V to 1.7 V
G = 1
100
dB
G = 10
115
dB
G = 100
120
dB
G = 1000
120
dB
INPUT CURRENT
Input Bias Current1
TA = +25°C
5
20
27
5
20
27
nA
TA = +125°C
5
15
25
5
15
25
nA
TA = 40°C
5
30
35
5
30
35
nA
Average Temperature Coefficient
TA = 40°C to +125°C
70
pA/°C
Input Offset Current
TA = +25°C
1
0.5
nA
TA = +125°C
1.5
0.5
nA
TA = 40°C
1
0.1
nA
Average Temperature Coefficient
TA =40°C to +125°C
5
pA/°C
REFERENCE INPUT
RIN
100
IIN
7
A
Voltage Range
VS
+VS
VS
+VS
V
Reference Gain to Output
1
V/V
Reference Gain Error
0.01
%
DYNAMIC RESPONSE
Small-Signal 3 dB Bandwidth
G = 1
1500
kHz
G = 10
160
kHz
G = 100
20
kHz
G = 1000
2
kHz
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