参数资料
型号: AD823AARMZ-R7
厂商: Analog Devices Inc
文件页数: 9/20页
文件大小: 0K
描述: IC OPAMP JFET RR 17MHZ DL 8MSOP
标准包装: 1,000
放大器类型: J-FET
电路数: 2
输出类型: 满摆幅
转换速率: 35 V/µs
-3db带宽: 19MHz
电流 - 输入偏压: 1.3pA
电压 - 输入偏移: 700µV
电流 - 电源: 6.3mA
电流 - 输出 / 通道: 44mA
电压 - 电源,单路/双路(±): 3 V ~ 36 V,±1.5 V ~ 18 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-TSSOP,8-MSOP(0.118",3.00mm 宽)
供应商设备封装: 8-MSOP
包装: 带卷 (TR)
Data Sheet
AD823A
Rev. | Page 17 of 20
log f
fp
G = 1
G = R2C1s
fx
fu
OPEN-LOOP GAIN
(A) WITHOUT COMPENSATION
f
fp
G = 1
f
fx
fu
G = 1 + CS/CF
fz
fn
(B) WITH COMPENSATION
I TO V GAIN
PH
A
SE
)
|A|
(
d
B)
|A
(
s)
|
–180°
–135°
–90°
–45°
–135°
–90°
–45°
45°
90°
G = RFCS(s)
09439-
400
Figure 43. Gain and Phase Plot of the Transimpedance Amplifier Design
The dominant sources of output noise in the wideband
photodiode preamp design are the input voltage noise of the
amplifier, VNOISE and the resistor noise due to RF. The gray curve
in Figure 43 shows the noise gain over frequencies for the
photodiode preamp. The noise bandwidth is at the frequency fN,
and it can be calculated by
(
)
F
S
u
N
C
f
+
=
(6)
Figure 44 shows the AD823A configured as a transimpedance
photodiode amplifier. The amplifier is used in conjunction with
a photodiode detector with input capacitance of 5 pF. Figure 45
shows the transimpedance response of the AD823A when IPHOTO
is 1 A p-p. The amplifier has a bandwidth of 2.2 MHz when it
is maximized for a 45° phase margin with CF = 1.2 pF. Note that
with the PCB parasitics added to CF, the peaking is only 0.5 dB
and the bandwidth is slightly reduced. Increasing CF to 2.7 pF
completely eliminates the peaking. However, it reduces the
bandwidth to 1.2 MHz.
Table 8 shows the noise sources and total output noise for the
photodiode preamp, where the preamplifier is configured to
have a 45° phase margin for maximal bandwidth and fz = fx = fn
in this case.
AD823A
0.1F
+5V
49.9k
VOUT
0.1F
–5V
100
1.2pF
09439-
050
Figure 44. Photodiode Preamplifier
95
85
86
87
88
89
90
91
92
93
94
1k
10k
100k
1M
10M
T
RANS
IM
P
E
DANCE
G
AI
N
(
d
B)
FREQUENCY (Hz)
09439-
144
IPHOTO = 1A p-p
CF = 1.2pF
IPHOTO = 1A p-p
CF = 2.7pF
Figure 45. Photodiode Preamplifier Frequency Response
B
相关PDF资料
PDF描述
MAX5380PEUK+T IC DAC 8BIT 2WIRE SER SOT23-5
MAX5381MEUK+T IC DAC 8BIT 2WIRE SER SOT23-5
1877845-6 PLUG 5POS 80 DEG BLK/BLK 2.7-3.9
UPC3217GV-A IC AGC AMPLIFIER 8-SSOP
VE-B3H-MU-F4 CONVERTER MOD DC/DC 52V 200W
相关代理商/技术参数
参数描述
AD823AARZ 功能描述:IC OP AMP R-R FET 16MHZ 8SOIC RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:1 系列:- 放大器类型:通用 电路数:4 输出类型:满摆幅 转换速率:0.028 V/µs 增益带宽积:105kHz -3db带宽:- 电流 - 输入偏压:3nA 电压 - 输入偏移:100µV 电流 - 电源:3.3µA 电流 - 输出 / 通道:12mA 电压 - 电源,单路/双路(±):2.7 V ~ 12 V,±1.35 V ~ 6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:14-TSSOP(0.173",4.40mm 宽) 供应商设备封装:14-TSSOP 包装:剪切带 (CT) 其它名称:OP481GRUZ-REELCT
AD823AARZ_PROMO 制造商:Analog Devices 功能描述:IC OP-AMP PREC 19MHZ 35V/U
AD823AARZ-R7 功能描述:IC OPAMP FET RR 17MHZ DUAL 8SOIC RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:50 系列:- 放大器类型:J-FET 电路数:2 输出类型:- 转换速率:3.5 V/µs 增益带宽积:1MHz -3db带宽:- 电流 - 输入偏压:30pA 电压 - 输入偏移:2000µV 电流 - 电源:200µA 电流 - 输出 / 通道:- 电压 - 电源,单路/双路(±):7 V ~ 36 V,±3.5 V ~ 18 V 工作温度:0°C ~ 70°C 安装类型:通孔 封装/外壳:8-DIP(0.300",7.62mm) 供应商设备封装:8-PDIP 包装:管件
AD823AARZ-RL 功能描述:IC OPAMP FET RR 17MHZ DUAL 8SOIC RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:50 系列:- 放大器类型:J-FET 电路数:2 输出类型:- 转换速率:3.5 V/µs 增益带宽积:1MHz -3db带宽:- 电流 - 输入偏压:30pA 电压 - 输入偏移:2000µV 电流 - 电源:200µA 电流 - 输出 / 通道:- 电压 - 电源,单路/双路(±):7 V ~ 36 V,±3.5 V ~ 18 V 工作温度:0°C ~ 70°C 安装类型:通孔 封装/外壳:8-DIP(0.300",7.62mm) 供应商设备封装:8-PDIP 包装:管件
AD823AN 制造商:Analog Devices 功能描述:OP Amp Dual GP R-R O/P 制造商:Rochester Electronics LLC 功能描述:DUAL FET R-TO-R 12MHZ AMP - Bulk 制造商:Analog Devices 功能描述:Operational Amplifier (Op-Amp) IC