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| 型号： | AD8250-EVALZ |
| 厂商： | Analog Devices Inc |
| 文件页数： | 21/24页 |
| 文件大小： | 0K |
| 描述： | BOARD EVALUATION AD8250 |
| 标准包装： | 1 |
| 系列： | iCMOS® |
| 每 IC 通道数： | 1 - 单 |
| 放大器类型： | 仪表 |
| 输出类型： | 单端 |
| 转换速率： | 25 V/µs |
| -3db带宽： | 10MHz |
| 电流 - 输出 / 通道： | 37mA |
| 工作温度： | -40°C ~ 85°C |
| 电流供应（主 IC）： | 4.1mA |
| 电压 - 电源，单路/双路(±)： | 10 V ~ 30 V，±5 V ~ 15 V |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | AD8250 |
| 相关产品： | AD8250ARMZ-R7DKR-ND - IC AMP INST ICMOS LDRIFT 10MSOP AD8250ARMZ-R7CT-ND - IC AMP INST ICMOS LDRIFT 10MSOP AD8250ARMZ-RL-ND - IC AMP INST ICMOS LDRIFT 10MSOP AD8250ARMZ-R7TR-ND - IC AMP INST ICMOS LDRIFT 10MSOP AD8250ARMZ-ND - IC AMP INST ICMOS LDRIFT 10MSOP |
AD8250
Data Sheet
Rev. C | Page 6 of 24
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
Supply Voltage
±17 V
Power Dissipation
Output Short-Circuit Current
Indefinite1
Common-Mode Input Voltage
+VS + 13 V, VS 13 V
Differential Input Voltage
Digital Logic Inputs
±VS
Storage Temperature Range
65°C to +125°C
Operating Temperature Range3
40°C to +85°C
Lead Temperature (Soldering, 10 sec)
300°C
Junction Temperature
140°C
θJA (Four-Layer JEDEC Standard Board)
112°C/W
Package Glass Transition Temperature
140°C
1
Assumes that the load is referenced to midsupply.
2
Current must be kept to less than 6 mA.
3
Temperature for specified performance is 40°C to +85°C. For performance
to 125°C, see the Typical Performance Characteristics section.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational section of
this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the AD8250 package is
limited by the associated rise in junction temperature (TJ) on
the die. The plastic encapsulating the die locally reaches the
junction temperature. At approximately 140°C, which is the
glass transition temperature, the plastic changes its properties.
Even temporarily exceeding this temperature limit can change
the stresses that the package exerts on the die, permanently
shifting the parametric performance of the AD8250. Exceeding
a junction temperature of 140°C for an extended period can
result in changes in silicon devices, potentially causing failure.
The still-air thermal properties of the package and PCB (θJA),
the ambient temperature (TA), and the total power dissipated in
the package (PD) determine the junction temperature of the die.
The junction temperature is calculated as
TJ = TA + (PD × θJA)
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. The quiescent
power is the voltage between the supply pins (VS) times the
quiescent current (IS). Assuming that the load (RL) is referenced
to midsupply, the total drive power is VS/2 × IOUT, some of which
is dissipated in the package and some in the load (VOUT × IOUT).
The difference between the total drive power and the load
power is the drive power dissipated in the package.
PD = Quiescent Power + (Total Drive Power Load Power)
(
)
L
OUT
L
OUT
S
D
R
V
R
V
I
V
P
2
–
2
×
+
×
=
In single-supply operation with RL referenced to VS, the worst
case is VOUT = VS/2.
Airflow increases heat dissipation, effectively reducing θJA. In
addition, more metal directly in contact with the package leads
from metal traces, through holes, ground, and power planes
reduces the θJA.
Figure 4 shows the maximum safe power dissipation in the
package vs. the ambient temperature on a four-layer JEDEC
standard board.
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
–40
–20
120
100
80
60
40
20
0
MA
XI
MU
M
PO
W
ER
D
ISSI
PA
T
IO
N
(W
)
AMBIENT TEMPERATURE (°C)
06288-
004
Figure 4. Maximum Power Dissipation vs. Ambient Temperature
ESD CAUTION
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