参数资料
| 型号： | AD825AR |
| 厂商： | Analog Devices Inc |
| 文件页数： | 8/12页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP JFET GP 26MHZ 8SOIC |
| 标准包装： | 98 |
| 放大器类型： | J-FET |
| 电路数： | 1 |
| 转换速率： | 140 V/µs |
| 增益带宽积： | 26MHz |
| -3db带宽： | 46MHz |
| 电流 - 输入偏压： | 15pA |
| 电压 - 输入偏移： | 1000µV |
| 电流 - 电源： | 6.5mA |
| 电流 - 输出 / 通道： | 50mA |
| 电压 - 电源，单路/双路(±)： | 10 V ~ 36 V，±5 V ~ 18 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 管件 |
| 产品目录页面： | 766 (CN2011-ZH PDF) |
AD825
Rev. F | Page 5 of 12
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
Supply Voltage
±18 V
Internal Power Dissipation1
Small Outline (R)
See Figure 6
Input Voltage (Common Mode)
±VS
Differential Input Voltage
±VS
Output Short-Circuit Duration
See Figure 6
Storage Temperature Range (R, R-16)
65°C to +125°C
Operating Temperature Range
40°C to +85°C
Lead Temperature Range
(Soldering 10 sec)
300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
1 Specification is for device in free air:
8-lead SOIC package: θJA = 155°C/W
16-lead SOIC package: θJA = 85°C/W
PIN CONFIGURATIONS
NC = NO CONNECT
AD825
TOP VIEW
(Not to Scale)
NC
1
–IN
2
+IN
3
–VS 4
NC
8
+VS
7
OUTPUT
6
NC
5
00876-E
-001
Figure 4. 8-Lead SOIC
NC
1
NC
2
NC
3
–INPUT
4
+INPUT
5
–VS 6
NC
7
NC
8
NC
10
NC
16
NC
15
NC
14
+VS
13
OUTPUT
12
NC
11
NC
9
AD825
TOP VIEW
(Not to Scale)
NC = NO CONNECT
00876-E
-002
Figure 5. 16-Lead SOIC
AMBIENT TEMPERATURE (°C)
2.0
1.5
0
–50
90
–40 –30 –20 –10
0
102030
50
607080
40
1.0
0.5
8-LEAD SOIC PACKAGE
TJ = 150°C
M
A
XIM
U
M
POW
E
R
D
ISSIPA
TION
(
W
)
2.5
16-LEAD SOIC PACKAGE
00876-E
-004
Figure 6. Maximum Power Dissipation vs. Temperature
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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