参数资料
型号: AD825ARZ-16-REEL7
厂商: Analog Devices Inc
文件页数: 8/12页
文件大小: 0K
描述: IC OPAMP JFET GP 26MHZ 16SOIC
标准包装: 400
放大器类型: J-FET
电路数: 1
转换速率: 140 V/µs
增益带宽积: 26MHz
-3db带宽: 46MHz
电流 - 输入偏压: 15pA
电压 - 输入偏移: 1000µV
电流 - 电源: 6.5mA
电流 - 输出 / 通道: 50mA
电压 - 电源,单路/双路(±): 10 V ~ 36 V,±5 V ~ 18 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.295",7.50mm 宽)
供应商设备封装: 16-SOIC W
包装: 带卷 (TR)
AD825
Rev. F | Page 5 of 12
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
Supply Voltage
±18 V
Internal Power Dissipation1
Small Outline (R)
Input Voltage (Common Mode)
±VS
Differential Input Voltage
±VS
Output Short-Circuit Duration
Storage Temperature Range (R, R-16)
65°C to +125°C
Operating Temperature Range
40°C to +85°C
Lead Temperature Range
(Soldering 10 sec)
300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
1 Specification is for device in free air:
8-lead SOIC package: θJA = 155°C/W
16-lead SOIC package: θJA = 85°C/W
PIN CONFIGURATIONS
NC = NO CONNECT
AD825
TOP VIEW
(Not to Scale)
NC
1
–IN
2
+IN
3
–VS 4
NC
8
+VS
7
OUTPUT
6
NC
5
00876-E
-001
Figure 4. 8-Lead SOIC
NC
1
NC
2
NC
3
–INPUT
4
+INPUT
5
–VS 6
NC
7
NC
8
NC
10
NC
16
NC
15
NC
14
+VS
13
OUTPUT
12
NC
11
NC
9
AD825
TOP VIEW
(Not to Scale)
NC = NO CONNECT
00876-E
-002
Figure 5. 16-Lead SOIC
AMBIENT TEMPERATURE (°C)
2.0
1.5
0
–50
90
–40 –30 –20 –10
0
102030
50
607080
40
1.0
0.5
8-LEAD SOIC PACKAGE
TJ = 150°C
M
A
XIM
U
M
POW
E
R
D
ISSIPA
TION
(
W
)
2.5
16-LEAD SOIC PACKAGE
00876-E
-004
Figure 6. Maximum Power Dissipation vs. Temperature
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
相关PDF资料
PDF描述
929667-02-25-I CONN HEADER .100 DUAL R/A 50POS
1.5KE150AHE3/54 TVS UNIDIR 1.5KW 150V 5% 1.5KE
TMM-146-01-G-D CONN HEADER 92POS DUAL 2MM T/H
1.5KE13AHE3/54 TVS UNIDIRECT 1.5KW 13V 5% 1.5KE
FTSH-147-01-L-DV CONN HEADER 94POS DUAL .05" SMD
相关代理商/技术参数
参数描述
AD825ARZ-16-REEL71 制造商:AD 制造商全称:Analog Devices 功能描述:Low Cost, General-Purpose High Speed JFET Amplifier
AD825ARZ-REEL 功能描述:IC OPAMP JFET GP 26MHZ 8SOIC RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:50 系列:- 放大器类型:通用 电路数:2 输出类型:满摆幅 转换速率:1.8 V/µs 增益带宽积:6.5MHz -3db带宽:4.5MHz 电流 - 输入偏压:5nA 电压 - 输入偏移:100µV 电流 - 电源:65µA 电流 - 输出 / 通道:35mA 电压 - 电源,单路/双路(±):1.8 V ~ 5.25 V,±0.9 V ~ 2.625 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:10-TFSOP,10-MSOP(0.118",3.00mm 宽) 供应商设备封装:10-MSOP 包装:管件
AD825ARZ-REEL7 功能描述:IC OPAMP JFET GP 26MHZ 8SOIC RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:50 系列:LinCMOS™ 放大器类型:通用 电路数:4 输出类型:- 转换速率:0.05 V/µs 增益带宽积:110kHz -3db带宽:- 电流 - 输入偏压:0.7pA 电压 - 输入偏移:210µV 电流 - 电源:57µA 电流 - 输出 / 通道:30mA 电压 - 电源,单路/双路(±):3 V ~ 16 V,±1.5 V ~ 8 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:14-SOIC(0.154",3.90mm 宽) 供应商设备封装:14-SOIC 包装:管件 产品目录页面:865 (CN2011-ZH PDF) 其它名称:296-1834296-1834-5
AD826 制造商:未知厂家 制造商全称:未知厂家 功能描述:Mini size of Discrete semiconductor elements
AD8260 制造商:AD 制造商全称:Analog Devices 功能描述:High Current Driver Amplifier and Digital VGA/Preamplifier with 3 dB Steps