参数资料
型号: AD826ARZ
厂商: Analog Devices Inc
文件页数: 9/15页
文件大小: 0K
描述: IC OPAMP VF 50MHZ DUAL LP 8SOIC
标准包装: 98
放大器类型: 电压反馈
电路数: 2
转换速率: 350 V/µs
增益带宽积: 50MHz
-3db带宽: 50MHz
电流 - 输入偏压: 3.3µA
电压 - 输入偏移: 500µV
电流 - 电源: 6.6mA
电流 - 输出 / 通道: 50mA
电压 - 电源,单路/双路(±): 5 V ~ 36 V,±2.5 V ~ 18 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 管件
产品目录页面: 769 (CN2011-ZH PDF)
–3–
AD826
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±18 V
Internal Power Dissipation
2
Plastic (N) . . . . . . . . . . . . . . . . . . . . . See Derating Curves
Small Outline (R) . . . . . . . . . . . . . . . . See Derating Curves
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . .
±VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . .
±6 V
Output Short Circuit Duration . . . . . . . See Derating Curves
Storage Temperature Range (N, R) . . . . . . . –65
°C to +125°C
Operating Temperature Range . . . . . . . . . . –40
°C to +85°C
Lead Temperature Range (Soldering 10 seconds) . . . +300
°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability .
2Specification is for device in free air: 8-lead plastic package,
θ
JA = 100
°C/watt;
8-lead SOIC package,
θ
JA = 155
°C/watt.
Parameter
Conditions
VS
Min
Typ
Max
Unit
OUTPUT CHARACTERISTICS
Output Voltage Swing
RLOAD = 500
±5 V
3.3
3.8
±V
RLOAD = 150
±5 V
3.2
3.6
±V
RLOAD = 1 k
±15 V
13.3
13.7
±V
RLOAD = 500
±15 V
12.8
13.4
±V
RLOAD = 500
0, +5 V
+1.5,
+3.5
V
Output Current
±15 V
50
mA
±5 V
50
mA
0, +5 V
30
mA
Short-Circuit Current
±15 V
90
mA
Output Resistance
Open Loop
8
MATCHING CHARACTERISTICS
Dynamic
Crosstalk
f = 5 MHz
±15 V
–80
dB
Gain Flatness Match
G = +1, f = 40 MHz
±15 V
0.2
dB
Slew Rate Match
G = –1
±15 V
10
V/
s
DC
Input Offset Voltage Match
TMIN–TMAX
±5 V to ±15 V
0.5
2
mV
Input Bias Current Match
TMIN–TMAX
±5 V to ±15 V
0.06
0.8
A
Open-Loop Gain Match
VO =
±10 V, RLOAD = 1 k,
TMIN–TMAX
±15 V
0.15
0.01
mV/V
Common-Mode Rejection Ratio Match
VCM =
±12 V, TMIN–TMAX
±15 V
80
100
dB
Power Supply Rejection Ratio Match
±5 V to ±15 V, T
MIN –TMAX
80
100
dB
POWER SUPPLY
Operating Range
Dual Supply
±2.5
±18
V
Single Supply
+5
+36
V
Quiescent Current/Amplifier
±5 V
6.6
7.5
mA
TMIN to TMAX
±5 V
7.5
mA
±15 V
7.5
mA
TMIN to TMAX
±15 V
6.8
7.5
mA
Power Supply Rejection Ratio
VS =
±5 V to ±15 V, TMIN to TMAX
75
86
dB
NOTES
1Full power bandwidth = slew rate/2
π V
PEAK.
Specifications subject to change without notice.
ESD SUSCEPTIBILITY
ESD (electrostatic discharge) sensitive device. Electrostatic charges
as high as 4000 volts, which readily accumulate on the human
body and on test equipment, can discharge without detection.
Although the AD826 features proprietary ESD protection cir-
cuitry, permanent damage may still occur on these devices
if they are subjected to high energy electrostatic discharges.
Therefore, proper ESD precautions are recommended to avoid
any performance degradation or loss of functionality.
2.0
0
–50
90
1.5
0.5
–30
1.0
50
70
30
10
–10
80
–40
40
60
20
0
–20
AMBIENT TEMPERATURE – C
MAXIMUM
POWER
DISSIPATION
Watts
8-LEAD MINI-DIP PACKAGE
8-LEAD SOIC PACKAGE
TJ = +150 C
Maximum Power Dissipation vs. Temperature for Different
Package Types
REV. C
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