参数资料
型号: AD8429BRZ-R7
厂商: Analog Devices Inc
文件页数: 14/20页
文件大小: 0K
描述: IC OP AMP INST LOW NOISE 8SOIC
标准包装: 1,000
放大器类型: 仪表
电路数: 1
转换速率: 22 V/µs
-3db带宽: 15MHz
电流 - 输入偏压: 150nA
电压 - 输入偏移: 50µV
电流 - 电源: 6.7mA
电流 - 输出 / 通道: 35mA
电压 - 电源,单路/双路(±): ±4 V ~ 18 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 带卷 (TR)
AD8429
Rev. 0 | Page 3 of 20
SPECIFICATIONS
VS = ±15 V, VREF = 0 V, TA = 25°C, G = 1, RL = 10 kΩ, unless otherwise noted.
Table 1.
A Grade
B Grade
Parameter
Test Conditions/Comments
Min
Typ
Max
Min
Typ
Max
Unit
COMMON-MODE REJECTION
RATIO (CMRR)
CMRR DC to 60 Hz with 1 kΩ
Source Imbalance
VCM = ±10 V
G = 1
80
90
dB
G = 10
100
110
dB
G = 100
120
130
dB
G = 1000
134
140
dB
CMRR at 5 kHz
VCM = ±10 V
G = 1
76
80
dB
G = 10
90
dB
G = 100
90
dB
G = 1000
90
dB
VOLTAGE NOISE, RTI
VIN+, VIN = 0 V
Spectral Density1: 1 kHz
Input Voltage Noise, eni
1.0
nV/√Hz
Output Voltage Noise, eno
45
nV/√Hz
Peak to Peak: 0.1 Hz to 10 Hz
G = 1
2
μV p-p
G = 1000
100
nV p-p
CURRENT NOISE
Spectral Density: 1 kHz
1.5
pA/√Hz
Peak to Peak: 0.1 Hz to 10 Hz
100
pA p-p
VOLTAGE OFFSET2
Input Offset, VOSI
150
50
μV
Average TC
0.1
1
0.1
0.3
μV/°C
Output Offset, VOSO
1000
500
μV
Average TC
3
10
3
10
μV/°C
Offset RTI vs. Supply (PSR)
VS = ±5 V to ±15 V
G = 1
90
100
dB
G = 10
110
120
dB
G = 100
130
dB
G = 1000
130
dB
INPUT CURRENT
Input Bias Current
300
150
nA
Average TC
250
pA/°C
Input Offset Current
100
30
nA
Average TC
15
pA/°C
DYNAMIC RESPONSE
Small Signal Bandwidth: –3 dB
G = 1
15
MHz
G = 10
4
MHz
G = 100
1.2
MHz
G = 1000
0.15
MHz
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