参数资料
型号: AD8432-EVALZ
厂商: Analog Devices Inc
文件页数: 28/32页
文件大小: 0K
描述: BOARD EVALUATION FOR AD8432
标准包装: 1
每 IC 通道数: 2 - 双
放大器类型: 电压反馈
输出类型: 差分
转换速率: 295 V/µs
-3db带宽: 200MHz
电流 - 输出 / 通道: 77mA
工作温度: -40°C ~ 85°C
电流供应(主 IC): 24mA
电压 - 电源,单路/双路(±): 4.5 V ~ 5.5 V
板类型: 完全填充
已供物品:
已用 IC / 零件: AD8432
Data Sheet
AD8432
Rev. C | Page 5 of 32
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Rating
Voltage
Supply Voltage
5.5 V
Input Voltage
0 V to VPS
Power Dissipation
120 mW
Temperature
Operating Temperature
–40°C to +85°C
Storage Temperature
–65°C to +150°C
Package Glass Transition Temperature (T
G)
150°C
Lead Temperature (Soldering, 60 sec)
300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages. The θJA
value in Table 3 assumes a 4-layer JEDEC standard board with
zero airflow.
Table 3. Thermal Resistance1
Parameter
θJA
θJC
θJB
ΨJT
Unit
40-Lead LFCSP
57.9
11.2
35.9
1.1
°C/W
1 4-layer JEDEC board (2S2P).
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation for the AD8432 is limited
by the associated rise in junction temperature (TJ) on the die. At
approximately 150°C, which is the glass transition temperature,
the properties of the plastic change. Even temporarily exceeding
this temperature limit may change the stresses that the package
exerts on the die, permanently shifting the parametric performance
of the amplifiers. Exceeding a temperature of 150°C for an
extended period can cause changes in silicon devices, potentially
resulting in a loss of functionality.
ESD CAUTION
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