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| 型号： | AD8512ARMZ-R2 |
| 厂商： | ANALOG DEVICES INC |
| 元件分类： | 运动控制电子 |
| 英文描述： | Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifiers |
| 中文描述： | DUAL OP-AMP, 1800 uV OFFSET-MAX, 8 MHz BAND WIDTH, PDSO8 |
| 封装： | ROHS COMPLIANT, MO-187AA, MSOP-8 |
| 文件页数： | 6/20页 |
| 文件大小： | 497K |
| 代理商： | AD8512ARMZ-R2 |
AD8510/AD8512/AD8513
ABSOLUTE MAXIMUM RATINGS
Table 3. AD8510/AD8512/AD8513 Stress Ratings
1
Parameter
Supply Voltage
Input Voltage
Output Short-Circuit Duration to GND
Rev. E | Page 6 of 20
Rating
±18 V
±V
S
Observe Derating
Curves
65°C to +150°C
40°C to +125°C
65°C to +150°C
300°C
Storage Temperature Range
R, RM Packages
Operating Temperature Range
Junction Temperature Range
R, RM Packages
Lead Temperature Range
(Soldering, 10 sec)
Electrostatic Discharge (HBM)
2000 V
Table 4. Thermal Resistance
Package Type
8-Lead MSOP (RM)
8-Lead SOIC (R)
14-Lead SOIC (R)
14-Lead TSSOP (RU)
θ
JA2
210
158
120
180
θ
JC
45
43
36
35
Unit
°C/W
°C/W
°C/W
°C/W
1
Stresses above those listed under Absolute Maximum Ratings may cause
permanent damage to the device. This is a stress rating only; functional
operation of the device at these or any other conditions above those listed in
the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device
reliability.
2
θ
JA
is specified for worst-case conditions, i.e., θ
JA
is specified for device
soldered in circuit board for surface-mount packages.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
this product features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
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相关代理商/技术参数 |
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|---|---|
| AD8512ARMZ-R2 | 制造商:Analog Devices 功能描述:Operational Amplifier (Op-Amp) IC |
| AD8512ARMZ-REEL | 功能描述:IC OPAMP JFET 8MHZ DUAL LN 8MSOP RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 产品培训模块:Differential Circuit Design Techniques for Communication Applications 标准包装:1 系列:- 放大器类型:RF/IF 差分 电路数:1 输出类型:差分 转换速率:9800 V/µs 增益带宽积:- -3db带宽:2.9GHz 电流 - 输入偏压:3µA 电压 - 输入偏移:- 电流 - 电源:40mA 电流 - 输出 / 通道:- 电压 - 电源，单路/双路(±):3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:16-VQFN 裸露焊盘，CSP 供应商设备封装:16-LFCSP-VQ 包装:剪切带 (CT) 产品目录页面:551 (CN2011-ZH PDF) 其它名称:ADL5561ACPZ-R7CT |
| AD8512AR-REEL | 功能描述:IC OPAMP JFET 8MHZ DUAL LN 8SOIC RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:2,500 系列:- 放大器类型:通用 电路数:1 输出类型:满摆幅 转换速率:0.11 V/µs 增益带宽积:350kHz -3db带宽:- 电流 - 输入偏压:4nA 电压 - 输入偏移:20µV 电流 - 电源:260µA 电流 - 输出 / 通道:20mA 电压 - 电源，单路/双路(±):2.7 V ~ 36 V，±1.35 V ~ 18 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SO 包装:带卷 (TR) |
| AD8512AR-REEL7 | 功能描述:IC OPAMP JFET 8MHZ DUAL LN 8SOIC RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:2,500 系列:- 放大器类型:通用 电路数:1 输出类型:满摆幅 转换速率:0.11 V/µs 增益带宽积:350kHz -3db带宽:- 电流 - 输入偏压:4nA 电压 - 输入偏移:20µV 电流 - 电源:260µA 电流 - 输出 / 通道:20mA 电压 - 电源，单路/双路(±):2.7 V ~ 36 V，±1.35 V ~ 18 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SO 包装:带卷 (TR) |
| AD8512ARZ | 功能描述:IC OPAMP JFET 8MHZ DUAL LN 8SOIC RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 产品培训模块:Differential Circuit Design Techniques for Communication Applications 标准包装:1 系列:- 放大器类型:RF/IF 差分 电路数:1 输出类型:差分 转换速率:9800 V/µs 增益带宽积:- -3db带宽:2.9GHz 电流 - 输入偏压:3µA 电压 - 输入偏移:- 电流 - 电源:40mA 电流 - 输出 / 通道:- 电压 - 电源，单路/双路(±):3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:16-VQFN 裸露焊盘，CSP 供应商设备封装:16-LFCSP-VQ 包装:剪切带 (CT) 产品目录页面:551 (CN2011-ZH PDF) 其它名称:ADL5561ACPZ-R7CT |
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