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| 型号： | AD8513 |
| 厂商： | Analog Devices, Inc. |
| 元件分类： | 运动控制电子 |
| 英文描述： | Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifiers |
| 中文描述： | 精密，非常低噪声，低输入偏置电流，高带宽结型场效应管运算放大器 |
| 文件页数： | 6/20页 |
| 文件大小： | 497K |
| 代理商： | AD8513 |
AD8510/AD8512/AD8513
ABSOLUTE MAXIMUM RATINGS
Table 3. AD8510/AD8512/AD8513 Stress Ratings
1
Parameter
Supply Voltage
Input Voltage
Output Short-Circuit Duration to GND
Rev. E | Page 6 of 20
Rating
±18 V
±V
S
Observe Derating
Curves
65°C to +150°C
40°C to +125°C
65°C to +150°C
300°C
Storage Temperature Range
R, RM Packages
Operating Temperature Range
Junction Temperature Range
R, RM Packages
Lead Temperature Range
(Soldering, 10 sec)
Electrostatic Discharge (HBM)
2000 V
Table 4. Thermal Resistance
Package Type
8-Lead MSOP (RM)
8-Lead SOIC (R)
14-Lead SOIC (R)
14-Lead TSSOP (RU)
θ
JA2
210
158
120
180
θ
JC
45
43
36
35
Unit
°C/W
°C/W
°C/W
°C/W
1
Stresses above those listed under Absolute Maximum Ratings may cause
permanent damage to the device. This is a stress rating only; functional
operation of the device at these or any other conditions above those listed in
the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device
reliability.
2
θ
JA
is specified for worst-case conditions, i.e., θ
JA
is specified for device
soldered in circuit board for surface-mount packages.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
this product features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
相关PDF资料 |
PDF描述 |
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| AD8513AR | Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifiers |
| AD8513AR-REEL | Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifiers |
| AD8513AR-REEL7 | Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifiers |
| AD8513ARU | Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifiers |
| AD8513ARU-REEL | Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifiers |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AD8513AR | 功能描述:IC OPAMP JFET 8MHZ QUAD 14SOIC RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:2,500 系列:Excalibur™ 放大器类型:J-FET 电路数:1 输出类型:- 转换速率:45 V/µs 增益带宽积:10MHz -3db带宽:- 电流 - 输入偏压:20pA 电压 - 输入偏移:490µV 电流 - 电源:1.7mA 电流 - 输出 / 通道:48mA 电压 - 电源，单路/双路(±):4.5 V ~ 38 V，±2.25 V ~ 19 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| AD8513AR-REEL | 功能描述:IC OPAMP JFET 8MHZ QUAD 14SOIC RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:150 系列:- 放大器类型:音频 电路数:2 输出类型:- 转换速率:5 V/µs 增益带宽积:12MHz -3db带宽:- 电流 - 输入偏压:100nA 电压 - 输入偏移:500µV 电流 - 电源:6mA 电流 - 输出 / 通道:50mA 电压 - 电源，单路/双路(±):4 V ~ 32 V，±2 V ~ 16 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-TSSOP（0.173"，4.40mm 宽） 供应商设备封装:8-TSSOP 包装:管件 |
| AD8513AR-REEL7 | 功能描述:IC OPAMP JFET 8MHZ QUAD 14SOIC RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:150 系列:- 放大器类型:音频 电路数:2 输出类型:- 转换速率:5 V/µs 增益带宽积:12MHz -3db带宽:- 电流 - 输入偏压:100nA 电压 - 输入偏移:500µV 电流 - 电源:6mA 电流 - 输出 / 通道:50mA 电压 - 电源，单路/双路(±):4 V ~ 32 V，±2 V ~ 16 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-TSSOP（0.173"，4.40mm 宽） 供应商设备封装:8-TSSOP 包装:管件 |
| AD8513ARU | 制造商:Rochester Electronics LLC 功能描述:PRECISION LOW NOISE JFET AMPLIFIER - Bulk 制造商:Analog Devices 功能描述:9V to 36V 4 8MHz IyAv 14TSSOP Tube 制造商:Analog Devices 功能描述:IC AMP LOW NOISE |
| AD8513ARU-REEL | 制造商:Analog Devices 功能描述:OP Amp Quad GP |
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