参数资料
| 型号： | AD8548ARZ-RL |
| 厂商： | Analog Devices Inc |
| 文件页数： | 4/7页 |
| 文件大小： | 0K |
| 描述： | IC AMP QUAD MICROPWR 16V 14SOIC |
| 标准包装： | 2,500 |
| 放大器类型： | 通用 |
| 电路数： | 4 |
| 输出类型： | 满摆幅 |
| 转换速率： | 0.07 V/µs |
| 增益带宽积： | 200kHz |
| 电流 - 输入偏压： | 5pA |
| 电压 - 输入偏移： | 4000µV |
| 电流 - 电源： | 18µA |
| 电流 - 输出 / 通道： | 12mA |
| 电压 - 电源，单路/双路(±)： | 2.7 V ~ 18 V，±1.35 V ~ 9 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 14-SOIC |
| 包装： | 带卷 (TR) |
AD8548
Preliminary Technical Data
Rev. PrA | Page 4 of 7
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
Current Noise Density
in
f = 1 kHz
0.1
pA/√Hz
ELECTRICAL CHARACTERISTICS—10 V OPERATION
VSY = 10 V, VCM = VSY/2 V, TA = 25°C, unless otherwise specified.
Table 3.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
VCM = 0 V to 10 V
4
mV
VCM = 0 V to 10 V; 40°C ≤ TA ≤ +85°C
tbd
mV
VCM = 0 V to 10 V; 40°C ≤ TA ≤ +125°C
tbd
mV
Input Bias Current
IB
2
15
pA
40°C ≤ TA ≤ +125°C
2.6
nA
Input Offset Current
IOS
30
pA
40°C ≤ TA ≤ +125°C
500
pA
Input Voltage Range
0
10
V
Common-Mode Rejection Ratio
CMRR
VCM = 0 V to 10 V
90
105
dB
VCM = 0 V to 10 V; 40°C ≤ TA ≤ +85°C
72
dB
VCM = 0 V to 10 V; 40°C ≤ TA ≤ +125°C
64
dB
Large Signal Voltage Gain
AVO
RL = 100 k, VO = 0.5 V to 9.5 V
105
120
dB
40°C ≤ TA ≤ +85°C
95
dB
40°C ≤ TA ≤ +125°C
67
dB
Offset Voltage Drift
ΔVOS/ΔT
2
μV/°C
Input Resistance
RIN
10
G
Input Capacitance, Differential Mode
CINDM
3.5
pF
Input Capacitance, Common Mode
CINCM
3.5
pF
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
RL = 100 k to VCM; 40°C ≤ TA ≤ +125°C
9.98
V
Output Voltage Low
VOL
RL = 100 k to VCM; 40°C ≤ TA ≤ +125°C
20
mV
Short-Circuit Current
ISC
±11
mA
Closed-Loop Output Impedance
ZOUT
f = 1 kHz, AV = 1
15
Ω
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VSY = 2.7 V to 18 V
105
125
dB
40°C ≤ TA ≤ +125°C
70
dB
Supply Current per Amplifier
ISY
IO = 0 mA
18
22
A
40°C ≤ TA ≤ +125°C
33
A
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 1 M, CL = 10 pF, AV = 1
60
V/ms
Settling Time to 0.1%
ts
VIN = 1 V step, RL = 100 k, CL = 10 pF
13
s
Gain Bandwidth Product
GBP
RL = 1 M, CL = 10 pF, AV = 1
200
kHz
Phase Margin
ΦM
RL = 1 M, CL = 10 pF, AV = 1
60
Degrees
Channel Separation
CS
f = 10 kHz, RL = 1 M
105
dB
EMI Rejection Ratio of IN+
EMIRR
VIN = 100 mVPEAK; f = 400 MHz, 900 MHz,
1800 MHz, 2400 MHz
90
dB
NOISE PERFORMANCE
Voltage Noise
en p-p
f = 0.1 Hz to 10 Hz
5
V p-p
Voltage Noise Density
en
f = 1 kHz
50
nV/√Hz
f = 10 kHz
45
nV/√Hz
Current Noise Density
in
f = 1 kHz
0.1
pA/√Hz
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