参数资料
型号: AD8554AR-REEL7
厂商: Analog Devices Inc
文件页数: 18/24页
文件大小: 0K
描述: IC OPAMP CHOPPER R-R QUAD 14SOIC
产品变化通告: Product Discontinuance 27/Oct/2011
标准包装: 1,000
放大器类型: 断路器(零漂移)
电路数: 4
输出类型: 满摆幅
转换速率: 0.4 V/µs
增益带宽积: 1.5MHz
电流 - 输入偏压: 10pA
电压 - 输入偏移: 1000µV
电流 - 电源: 850µA
电流 - 输出 / 通道: 30mA
电压 - 电源,单路/双路(±): 2.7 V ~ 5.5 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 14-SOIC(0.154",3.90mm 宽)
供应商设备封装: 14-SOIC
包装: 带卷 (TR)
Data Sheet
AD8551/AD8552/AD8554
Rev. E | Page 3 of 24
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VS = 5 V, VCM = 2.5 V, VO = 2.5 V, TA = 25°C, unless otherwise noted.
Table 1.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
V
OS
1
5
μV
40°C ≤ T
A ≤ +125°C
10
μV
Input Bias Current
I
B
10
50
pA
AD8551/AD8554
40°C ≤ T
A ≤ +125°C
1.0
1.5
nA
AD8552
40°C ≤ T
A ≤ +85°C
160
300
pA
AD8552
40°C ≤ T
A ≤ +125°C
2.5
4
nA
Input Offset Current
I
OS
20
70
pA
AD8551/AD8554
40°C ≤ T
A ≤ +125°C
150
200
pA
AD8552
40°C ≤ T
A ≤ +85°C
30
150
pA
AD8552
40°C ≤ T
A ≤ +125°C
150
400
pA
Input Voltage Range
0
5
V
Common-Mode Rejection Ratio
CMRR
V
CM = 0 V to +5 V
120
140
dB
40°C ≤ T
A ≤ +125°C
115
130
dB
Large Signal Voltage Gain1
A
VO
R
L = 10 kΩ, VO = 0.3 V to 4.7 V
125
145
dB
40°C ≤ T
A ≤ +125°C
120
135
dB
Offset Voltage Drift
ΔV
OS/ΔT
40°C ≤ T
A ≤ +125°C
0.005
0.04
μV/°C
OUTPUT CHARACTERISTICS
Output Voltage High
V
OH
R
L = 100 kΩ to GND
4.99
4.998
V
R
L = 100 kΩ to GND @ 40°C to +125°C
4.99
4.997
V
R
L = 10 kΩ to GND
4.95
4.98
V
R
L = 10 kΩ to GND @ 40°C to +125°C
4.95
4.975
V
Output Voltage Low
V
OL
R
L = 100 kΩ to V+
1
10
mV
R
L = 100 kΩ to V+ @ 40°C to +125°C
2
10
mV
R
L = 10 kΩ to V+
10
30
mV
R
L = 10 kΩ to V+ @ 40°C to +125°C
15
30
mV
Output Short-Circuit Limit Current
I
SC
±25
±50
mA
40°C to +125°C
±40
mA
Output Current
I
O
±30
mA
40°C to +125°C
±15
mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
V
S = 2.7 V to 5.5 V
120
130
dB
40°C ≤ T
A ≤ +125°C
115
130
dB
Supply Current/Amplifier
I
SY
V
O = 0 V
850
975
μA
40°C ≤ T
A ≤ +125°C
1000
1075
μA
DYNAMIC PERFORMANCE
Slew Rate
SR
R
L = 10 kΩ
0.4
V/μs
Overload Recovery Time
0.05
0.3
ms
Gain Bandwidth Product
GBP
1.5
MHz
NOISE PERFORMANCE
Voltage Noise
e
n p-p
0 Hz to 10 Hz
1.0
μV p-p
e
n p-p
0 Hz to 1 Hz
0.32
μV p-p
Voltage Noise Density
e
n
f = 1 kHz
42
nV/√Hz
Current Noise Density
i
n
f = 10 Hz
2
fA/√Hz
1 Gain testing is dependent upon test bandwidth.
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