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参数资料
| 型号： | AD8554ARZ-REEL7 |
| 厂商： | Analog Devices Inc |
| 文件页数： | 18/24页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP CHOPPER R-R QUAD 14SOIC |
| 标准包装： | 1,000 |
| 放大器类型： | 断路器（零漂移） |
| 电路数： | 4 |
| 输出类型： | 满摆幅 |
| 转换速率： | 0.4 V/µs |
| 增益带宽积： | 1.5MHz |
| 电流 - 输入偏压： | 10pA |
| 电压 - 输入偏移： | 1000µV |
| 电流 - 电源： | 850µA |
| 电流 - 输出 / 通道： | 30mA |
| 电压 - 电源，单路/双路(±)： | 2.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 14-SOIC |
| 包装： | 带卷 (TR) |
Data Sheet
AD8551/AD8552/AD8554
Rev. E | Page 3 of 24
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VS = 5 V, VCM = 2.5 V, VO = 2.5 V, TA = 25°C, unless otherwise noted.
Table 1.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
V
OS
1
5
μV
40°C ≤ T
A ≤ +125°C
10
μV
Input Bias Current
I
B
10
50
pA
AD8551/AD8554
40°C ≤ T
A ≤ +125°C
1.0
1.5
nA
AD8552
40°C ≤ T
A ≤ +85°C
160
300
pA
AD8552
40°C ≤ T
A ≤ +125°C
2.5
4
nA
Input Offset Current
I
OS
20
70
pA
AD8551/AD8554
40°C ≤ T
A ≤ +125°C
150
200
pA
AD8552
40°C ≤ T
A ≤ +85°C
30
150
pA
AD8552
40°C ≤ T
A ≤ +125°C
150
400
pA
Input Voltage Range
0
5
V
Common-Mode Rejection Ratio
CMRR
V
CM = 0 V to +5 V
120
140
dB
40°C ≤ T
A ≤ +125°C
115
130
dB
Large Signal Voltage Gain1
A
VO
R
L = 10 kΩ, VO = 0.3 V to 4.7 V
125
145
dB
40°C ≤ T
A ≤ +125°C
120
135
dB
Offset Voltage Drift
ΔV
OS/ΔT
40°C ≤ T
A ≤ +125°C
0.005
0.04
μV/°C
OUTPUT CHARACTERISTICS
Output Voltage High
V
OH
R
L = 100 kΩ to GND
4.99
4.998
V
R
L = 100 kΩ to GND @ 40°C to +125°C
4.99
4.997
V
R
L = 10 kΩ to GND
4.95
4.98
V
R
L = 10 kΩ to GND @ 40°C to +125°C
4.95
4.975
V
Output Voltage Low
V
OL
R
L = 100 kΩ to V+
1
10
mV
R
L = 100 kΩ to V+ @ 40°C to +125°C
2
10
mV
R
L = 10 kΩ to V+
10
30
mV
R
L = 10 kΩ to V+ @ 40°C to +125°C
15
30
mV
Output Short-Circuit Limit Current
I
SC
±25
±50
mA
40°C to +125°C
±40
mA
Output Current
I
O
±30
mA
40°C to +125°C
±15
mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
V
S = 2.7 V to 5.5 V
120
130
dB
40°C ≤ T
A ≤ +125°C
115
130
dB
Supply Current/Amplifier
I
SY
V
O = 0 V
850
975
μA
40°C ≤ T
A ≤ +125°C
1000
1075
μA
DYNAMIC PERFORMANCE
Slew Rate
SR
R
L = 10 kΩ
0.4
V/μs
Overload Recovery Time
0.05
0.3
ms
Gain Bandwidth Product
GBP
1.5
MHz
NOISE PERFORMANCE
Voltage Noise
e
n p-p
0 Hz to 10 Hz
1.0
μV p-p
e
n p-p
0 Hz to 1 Hz
0.32
μV p-p
Voltage Noise Density
e
n
f = 1 kHz
42
nV/√Hz
Current Noise Density
i
n
f = 10 Hz
2
fA/√Hz
1 Gain testing is dependent upon test bandwidth.
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