参数资料
型号: AD8624ARUZ-RL
厂商: Analog Devices Inc
文件页数: 8/20页
文件大小: 0K
描述: IC OPAMP GP R-R QUAD 14TSSOP
标准包装: 2,500
放大器类型: 电压反馈
电路数: 4
输出类型: 满摆幅
转换速率: 0.48 V/µs
增益带宽积: 560kHz
电流 - 输入偏压: 45pA
电压 - 输入偏移: 10µV
电流 - 电源: 215µA
电流 - 输出 / 通道: 40mA
电压 - 电源,单路/双路(±): ±2.5 V ~ 15 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 14-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 14-TSSOP
包装: 带卷 (TR)
AD8622/AD8624
Data Sheet
Rev. D | Page 16 of 20
HALL SENSOR SIGNAL CONDITIONING
The AD8622/AD8624 is also highly suitable for high accuracy,
low power signal conditioning circuits. One such use is in Hall
sensor signal conditioning (see Figure 57). The magnetic
sensitivity of a Hall element is proportional to the bias voltage
applied across it. With 1 V bias voltage, the Hall element
consumes about 2.5 mA of supply current and has a sensitivity
of 5.5 mV/mT typical. To reduce power consumption, bias
voltage must be reduced, but at the risk of lower sensitivity. The
only way to achieve higher sensitivity is by introducing a gain
using a precision micropower amplifier. The AD8622/AD8624,
with all its features, is well suited to amplify the sensitivity of the
Hall element.
The ADR121 is a precision micropower 2.5 V voltage reference.
A precision voltage reference is required to hold a constant current
so that the Hall voltage only depends on the intensity of the
magnetic field. Using the 4.12k:98.8k resistive divider, the bias
voltage of the Hall element is reduced to 100 mV, leading to only
250 A of power consumption. The 3-op-amp in-amp
configuration of the AD8622/AD8624 then increases the
sensitivity to 55 mV/mT. The key to high CMRR for this in-amp
configuration are resistors that are well matched (where R1/R2
= R3/R4) from both the resistive ratio and relative drift. The
resistors are important in determining the performance over
manufacturing tolerances, time and temperature. At least 1% or
better resistors are recommended. Using the AD8622/AD8624 to
amplify the sensor signal can reduce power while also achieving
higher sensitivity. The total current consumed is just 1.2 mA,
resulting in 21× improvement in sensitivity/power.
VSY
R6
9.9k
R3
9.9k
R5
9.9k
R1
9.9k
R2
9.9k
R7
200
R8
4.12k
R9
98.8k
R4
9.9k
ADR121 – 2.5V
400
×4
HALL
ELEMENT
VOUT = 2.5V +
× MAGNETIC FIELD (mT)
55mV
mT
07527-
052
+
+
VSY
+
VSY
AD862x
+
C3
0.1F
TO 10F
C2
0.1F
C1
1F TO 10F
NOTES
1. USE MATCHED RESISTORS FOR IN-AMP.
2. FOR INFORMATION ON C1, C2, AND C3, REFER TO ADR121 DATA SHEET.
Figure 57. Hall Sensor Signal Conditioning
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