参数资料
型号: AD8694WARUZ
厂商: Analog Devices Inc
文件页数: 11/16页
文件大小: 0K
描述: IC OPAMP GP R-R CMOS QD 14TSSOP
标准包装: 96
放大器类型: 通用
电路数: 4
输出类型: 满摆幅
转换速率: 5 V/µs
增益带宽积: 10MHz
电流 - 输入偏压: 0.2pA
电压 - 输入偏移: 400µV
电流 - 电源: 950µA
电流 - 输出 / 通道: 80mA
电压 - 电源,单路/双路(±): 2.7 V ~ 5.5 V,±1.35 V ~ 2.75 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 14-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 14-TSSOP
包装: 管件
产品目录页面: 772 (CN2011-ZH PDF)
AD8691/AD8692/AD8694
Data Sheet
Rev. F | Page 4 of 16
VS = 5.0 V, VCM = VS/2, TA = 25°C, unless otherwise noted.
Table 2.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
VCM = 0.3 V to +3.9 V
0.4
2.0
mV
VCM = 0.1 V to +3.9 V; 40°C < TA < +125°C
3.0
mV
Input Bias Current
IB
0.2
1
pA
40°C < TA < +85°C
50
pA
40°C < TA < +125°C
260
pA
Input Offset Current
IOS
0.1
0.5
pA
40°C < TA < +85°C
20
pA
40°C < TA < +125°C
75
pA
Input Voltage Range
0.3
+3.9
V
Common-Mode Rejection Ratio
CMRR
VCM = 0.3 V to +3.9 V
70
95
dB
VCM = 0.1 V to +3.9 V; 40°C < TA < +125°C
67
95
dB
Large Signal Voltage Gain
AVO
VO = 0.5 V to 4.5 V, RL = 2 k, VCM = 0 V
250
2000
V/mV
VO = 0.5 V to 4.5 V, RL = 2 k, VCM = 0 V
150
V/mV
Offset Voltage Drift
VOS/T
2
12
V/°C
1.3
6
V/°C
INPUT CAPACITANCE
Common-Mode Input Capacitance
CCM
5
pF
Differential Input Capacitance
CDM
2.5
pF
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
IL = 1 mA
4.96
4.98
V
IL = 10 mA
4.7
4.78
V
40°C to +125°C
4.6
V
Output Voltage Low
VOL
IL = 1 mA
20
40
mV
IL = 10 mA
165
210
mV
IL = 10 mA
185
240
mV
40°C to +125°C
290
mV
40°C to +125°C
370
mV
Short-Circuit Current
ISC
±80
mA
Closed-Loop Output Impedance
ZOUT
f = 1 MHz, AV = 1
10
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = 2.7 V to 5.5 V
80
95
dB
40°C < TA < +125°C
75
95
dB
Supply Current/Amplifier
ISY
VO = 0 V
0.95
1.05
mA
40°C < TA < +125°C
1.3
mA
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 2 k
5
V/s
Settling Time
tS
To 0.01%
1
s
Full Power Bandwidth
BWP
<1% distortion
360
kHz
Gain Bandwidth Product
GBP
10
MHz
Phase Margin
m
65
Degrees
Total Harmonic Distortion + Noise
THD + N
G = 1, RL = 600 , f = 1 kHz, VO = 1 V p-p
0.0006
%
NOISE PERFORMANCE
Voltage Noise
en p-p
f = 0.1 Hz to 10 Hz
1.6
3.0
V p-p
Voltage Noise Density
en
f = 1 kHz
8
12
nV/√Hz
en
f = 10 kHz
6.5
nV/√Hz
Current Noise Density
in
f = 1 kHz
0.05
pA/√Hz
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