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参数资料
| 型号： | ADA4417-3ARMZ-RL |
| 厂商： | Analog Devices Inc |
| 文件页数： | 12/16页 |
| 文件大小： | 0K |
| 描述： | IC VIDEO FILTER TRPL HD 10-MSOP |
| 标准包装： | 3,000 |
| 类型： | 视频滤波器 |
| 应用： | 机顶盒，视频播放器 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-TFSOP，10-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 10-MSOP |
| 包装： | 带卷 (TR) |
ADA4417-3
Rev. A | Page 5 of 16
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
Supply Voltage
5.5 V
Power Dissipation
See Figure 2
Storage Temperature Range
65°C to +125°C
Operating Temperature Range
40°C to +85°C
Lead Temperature (Soldering 10 sec)
300°C
Junction Temperature
150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 4.
Package Type
θJA
Unit
10-Lead MSOP
130
°C/W
Maximum Power Dissipation
The maximum safe power dissipation in the ADA4417-3
package is limited by the associated rise in junction temperature
(TJ) on the die. At approximately 150°C, which is the glass
transition temperature, the plastic changes its properties. Even
temporarily exceeding this temperature limit can change the
stresses that the package exerts on the die, permanently shifting
the parametric performance of the ADA4417-3. Exceeding a
junction temperature of 175°C for an extended period can
result in changes in the silicon devices potentially causing
failure.
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. The quiescent
power is the supply voltage (VS) times the quiescent current (IS).
Assuming the load (RL) is midsupply, then the total drive power is
VS/2 × IOUT
some of which is dissipated in the package and some in the load
(VOUT × IOUT).
RMS output voltages should be considered. If RL is referenced to
GND, the total power is VS × IOUT.
Airflow increases heat dissipation, effectively reducing θJA. In
addition, more metal directly in contact with the package leads
from metal traces, through holes, ground, and power planes
reduce the θJA.
Figure 2 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the 10-lead MSOP
(130°C/W) on a JEDEC standard 4-layer board. θJA values are
approximate.
2.0
1.5
1.0
0.5
0
–40 –30 –20 –10
0
1020304050607080
M
A
X
IM
U
M
PO
W
E
R
D
ISSI
PA
T
IO
N
(
W
)
AMBIENT TEMPERATURE (°C)
06
22
1-
00
2
Figure 2. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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