参数资料
型号: ADG1419BCPZ-REEL7
厂商: Analog Devices Inc
文件页数: 13/16页
文件大小: 0K
描述: IC SWITCH SPDT 4.6OHM 8LFCSP
标准包装: 1
系列: iCMOS®
功能: 开关
电路: 1 x SPDT - NC/NO
导通状态电阻: 4.6 欧姆
电压电源: 单/双电源
电压 - 电源,单路/双路(±): 5 V ~ 16.5 V,±2.25 V ~ 8.25 V
电流 - 电源: 120µA
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-WFDFN 裸露焊盘,CSP
供应商设备封装: 8-LFCSP-WD
包装: 标准包装
其它名称: ADG1419BCPZ-REEL7DKR
ADG1419
Rev. 0 | Page 6 of 16
Parameter
25°C
40°C to
+85°C
40°C to
+125°C
Unit
Test Conditions/Comments
DYNAMIC CHARACTERISTICS1
Transition Time, tTRANSITION
310
ns typ
RL = 300 Ω, CL = 35 pF
410
495
560
ns max
VS = 3 V; see Figure 25
tON (EN)
230
ns typ
RL = 300 Ω, CL = 35 pF
305
355
390
ns max
VS = 3 V; see Figure 27
tOFF (EN)
220
ns typ
RL = 300 Ω, CL = 35 pF
290
335
365
ns max
VS = 3 V; see Figure 27
Break-Before-Make Time Delay, tD
65
ns typ
RL = 300 Ω, CL = 35 pF
31
ns min
VS1 = VS2 = 3 V; see Figure 26
Charge Injection
59
pC typ
VS = 0 V, RS = 0 Ω, CL = 1 nF;
Off Isolation
60
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Channel-to-Channel Crosstalk
60
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Total Harmonic Distortion + Noise
0.04
% typ
RL = 10 kΩ, 5 V p-p, f = 20 Hz to 20 kHz;
3 dB Bandwidth
105
MHz typ
RL = 50 Ω, CL = 5 pF; see Figure 31
Insertion Loss
0.28
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
CS (Off )
26
pF typ
VS = 0 V, f = 1 MHz
CD (Off )
62
pF typ
VS = 0 V, f = 1 MHz
CD, CS (On)
128
pF typ
VS = 0 V, f = 1 MHz
POWER REQUIREMENTS
VDD = +5.5 V, VSS = 5.5 V
IDD
0.001
μA typ
Digital inputs = 0 V or VDD
1.0
μA max
ISS
0.001
μA typ
Digital inputs = 0 V or VDD
1.0
μA max
VDD/VSS
±4.5/±16.5
V min/max
Ground = 0 V
1 Guaranteed by design, not subject to production test.
CONTINUOUS CURRENT PER CHANNEL, S OR D
Table 4.
Parameter
25°C
85°C
125°C
Unit
Test Conditions/Comments
CONTINUOUS CURRENT PER CHANNEL1
±15 V Dual Supply
VDD = +13.5 V, VSS = 13.5 V
8-Lead MSOP (θJA = 206°C/W)
215
135
80
mA maximum
8-Lead LFCSP (θJA = 50.8°C/W)
390
215
100
mA maximum
+12 V Single Supply
VDD = 10.8 V, VSS = 0 V
8-Lead MSOP (θJA = 206°C/W)
175
115
70
mA maximum
8-Lead LFCSP (θJA = 50.8°C/W)
320
185
95
mA maximum
±5 V Dual Supply
VDD = +4.5 V, VSS = 4.5 V
8-Lead MSOP (θJA = 206°C/W)
165
110
70
mA maximum
8-Lead LFCSP (θJA = 50.8°C/W)
310
180
95
mA maximum
1 Guaranteed by design, not subject to production test.
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