参数资料
型号: ADG333ABRZ
厂商: Analog Devices Inc
文件页数: 7/12页
文件大小: 0K
描述: IC SWITCH QUAD SPDT 20SOIC
产品培训模块: iCMOS™ Switches and Multiplexers for Data Acquisition
Switch Fundamentals
标准包装: 37
功能: 开关
电路: 4 x SPDT - NC/NO
导通状态电阻: 35 欧姆
电压电源: 单/双电源
电压 - 电源,单路/双路(±): 12V,±1.5 V ~ 10 V
电流 - 电源: 50nA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 20-SOIC(0.295",7.50mm 宽)
供应商设备封装: 20-SOIC W
包装: 管件
产品目录页面: 800 (CN2011-ZH PDF)
ADG333A
Rev. A | Page 4 of 12
SINGLE SUPPLY
VDD = +12 V, VSS = 0 V ± 10%, GND = 0 V, unless otherwise noted.1
Table 2.
Parameter
+25°C
40°C to +85°C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to VDD
V
RON
35
typ
VD = 1 V, 10 V, IS = –1 mA
75
max
LEAKAGE CURRENTS
VDD = 13.2 V
Source OFF Leakage IS (OFF)
±0.1
nA typ
VD = 12.2 V/1 V, VS = 1 V/12.2 V
±0.25
±3
nA max
Channel ON Leakage ID, IS (ON)
±0.1
nA typ
VS = VD = 12.2 V/1 V
±0.4
±5
nA max
DIGITAL INPUTS
Input High Voltage, VINH
2.4
V min
Input Low Voltage, VINL
0.8
V max
Input Current
IINL or IINH
±0.005
A typ
VIN = 0 V or VDD
±0.5
A max
DYNAMIC CHARACTERISTICS2
tON
110
ns typ
RL = 300 , CL = 35 pF;
200
ns max
VS = 8 V; Figure 17
tOFF
100
ns typ
RL = 300 , CL = 35 pF;
180
ns max
VS = 8 V; Figure 17
Break-Before-Make Delay, tOPEN
10
ns min
RL = 300 , CL = 35 pF;
ns min
VS = 5 V; Figure 18
Charge Injection
5
pC typ
VD = 6 V, RD = 0 W, CL = 10 nF;
VDD = 12 V, VSS = 0 V; Figure 19
OFF Isolation
72
dB typ
RL = 75 , CL = 5 pF, f = 1 MHz;
VS = 1.15 V rms; Figure 20
Channel-to-Channel Crosstalk
85
dB typ
RL = 75 , CL = 5 pF, f = 1 MHz;
VS = 1.15 V rms; Figure 21
CS (OFF)
12
pF typ
CD, CS (ON)
25
pF typ
POWER REQUIREMENTS
VDD = 13.5 V
IDD
0.05
mA typ
Digital inputs = 0 V or 5 V
0.25
0.35
mA max
VDD
±3/±30
V min/V max
1 Temperature range is as follows: B Version: 40°C to +85°C.
2 Guaranteed by design; not subject to production test.
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