参数资料
型号: ADG719SRJZ-EP-R2
厂商: Analog Devices Inc
文件页数: 1/16页
文件大小: 0K
描述: IC SW/MUX 2:1 SPDT CMOS
标准包装: 250
功能: 开关
电路: 1 x SPDT
导通状态电阻: 4 欧姆
电压电源: 单电源
电压 - 电源,单路/双路(±): 1.8 V ~ 5.5 V
电流 - 电源: 1nA
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: SOT-23-6
供应商设备封装: SOT-23-6
包装: 带卷 (TR)
CMOS 1.8 V to 5.5 V, 2.5 Ω
2:1 Mux/SPDT Switch in SOT-23
ADG719
Rev. D
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rightsofthirdpartiesthatmayresultfromitsuse.Specificationssubjecttochangewithoutnotice.No
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FEATURES
1.8 V to 5.5 V single supply
4 Ω (max) on resistance
0.75 Ω (typ) on resistance flatness
3 dB bandwidth > 200 MHz
Rail-to-rail operation
6-Lead SOT-23 package and 8-Lead MSOP package
Fast switching times:
tON = 12 ns
tOFF = 6 ns
Typical power consumption: (< 0.01 μW)
TTL/CMOS compatible
APPLICATIONS
Battery-powered systems
Communication systems
Sample-and-hold systems
Audio signal routing
Video switching
Mechanical reed relay replacement
FUNCTIONAL BLOCK DIAGRAM
IN
ADG719
S2
NOTES
1. SWITCHES SHOWN FOR A LOGIC 1 INPUT.
S1
D
08
7
08
-00
1
Figure 1.
GENERAL DESCRIPTION
The ADG719 is a monolithic CMOS SPDT switch. This switch
is designed on a submicron process that provides low power
dissipation yet gives high switching speed, low on resistance,
and low leakage currents.
The ADG719 can operate from a single-supply range of 1.8 V
to 5.5 V, making it ideal for use in battery-powered instruments
and with the new generation of DACs and ADCs from Analog
Devices, Inc.
Each switch of the ADG719 conducts equally well in both
directions when on. The ADG719 exhibits break-before-make
switching action.
Because of the advanced submicron process, 3 dB bandwidths
of greater than 200 MHz can be achieved.
The ADG719 is available in a 6-lead SOT-23 package and an
8-lead MSOP package.
PRODUCT HIGHLIGHTS
1.
1.8 V to 5.5 V Single-Supply Operation. The ADG719
offers high performance, including low on resistance and
fast switching times, and is fully specified and guaranteed
with 3 V and 5 V supply rails.
2.
Very Low RON (4 Ω Max at 5 V and 10 Ω Max at 3 V). At 1.8 V
operation, RON is typically 40 Ω over the temperature range.
3.
Automotive Temperature Range: 40°C to +125°C.
4.
On Resistance Flatness (RFLAT(ON)) (0.75 Ω typ).
5.
3 dB Bandwidth > 200 MHz.
6.
Low Power Dissipation. CMOS construction ensures low
power dissipation.
7.
Fast tON/tOFF.
8.
Tiny, 6-lead SOT-23 and 8-lead MSOP packages.
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