参数资料
型号: ADM2582EBRWZ
厂商: Analog Devices Inc
文件页数: 8/20页
文件大小: 0K
描述: IC TXRX RS485 ISOLATED 20SOIC
标准包装: 37
系列: isoPower®
类型: 收发器,隔离式
驱动器/接收器数: 1/1
规程: RS422/RS485
电源电压: 3.3V,5V
安装类型: 表面贴装
封装/外壳: 20-SOIC(0.295",7.50mm 宽)
供应商设备封装: 20-SOIC W
包装: 管件
ADM2582E/ADM2587E
Rev. C | Page 16 of 20
APPLICATIONS INFORMATION
PCB LAYOUT
The ADM2582E/ADM2587E isolated RS-422/RS-485 transceiver
contains an isoPower integrated dc-to-dc converter, requiring
no external interface circuitry for the logic interfaces. Power
supply bypassing is required at the input and output supply pins
(see Figure 35). The power supply section of the ADM2582E/
ADM2587E uses an 180 MHz oscillator frequency to pass power
efficiently through its chip-scale transformers. In addition, the
normal operation of the data section of the iCoupler introduces
switching transients on the power supply pins.
Bypass capacitors are required for several operating frequencies.
Noise suppression requires a low inductance, high frequency
capacitor, whereas ripple suppression and proper regulation
require a large value capacitor. These capacitors are connected
between Pin 1 (GND1) and Pin 2 (VCC) and Pin 8 (VCC) and
Pin 9 (GND1) for VCC. The VISOIN and VISOOUT capacitors are
connected between Pin 11 (GND2) and Pin 12 (VISOOUT) and
Pin 19 (VISOIN) and Pin 20 (GND2). To suppress noise and reduce
ripple, a parallel combination of at least two capacitors is required
with the smaller of the two capacitors located closest to the device.
The recommended capacitor values are 0.1 μF and 10 μF for
VISOOUT at Pin 11 and Pin 12 and VCC at Pin 8 and Pin 9. Capacitor
values of 0.01 μF and 0.1 μF are recommended for VISOIN at
Pin 19 and Pin 20 and VCC at Pin 1 and Pin 2. The recommended
best practice is to use a very low inductance ceramic capacitor,
or its equivalent, for the smaller value. The total lead length
between both ends of the capacitor and the input power supply
pin should not exceed 10 mm.
VCC
2
GND1
3
RxD
4
GND2
20
VISOIN
19
A
18
B
17
RE
5
GND2
16
DE
6
Z
15
TxD
7
GND2
14
VCC
8
Y
13
GND1
9
VISOOUT
12
GND1
10
GND2
10F
10nF
100nF
11
GND1
1
0
81
11-
125
100nF
10nF
Figure 35. Recommended PCB Layout
In applications involving high common-mode transients, ensure
that board coupling across the isolation barrier is minimized.
Furthermore, design the board layout such that any coupling
that does occur equally affects all pins on a given component
side. Failure to ensure this can cause voltage differentials between
pins exceeding the absolute maximum ratings for the device,
thereby leading to latch-up and/or permanent damage.
The ADM2582E/ADM2587E dissipate approximately 650 mW
of power when fully loaded. Because it is not possible to apply
a heat sink to an isolation device, the devices primarily depend
on heat dissipation into the PCB through the GND pins. If the
devices are used at high ambient temperatures, provide a thermal
path from the GND pins to the PCB ground plane. The board
layout in Figure 35 shows enlarged pads for Pin 1, Pin 3, Pin 9,
Pin 10, Pin 11, Pin 14, Pin 16, and Pin 20. Implement multiple
vias from the pad to the ground plane to reduce the temperature
inside the chip significantly. The dimensions of the expanded
pads are at the discretion of the designer and dependent on the
available board space.
EMI CONSIDERATIONS
The dc-to-dc converter section of the ADM2582E/ADM2587E
components must, of necessity, operate at very high frequency
to allow efficient power transfer through the small transformers.
This creates high frequency currents that can propagate in circuit
board ground and power planes, causing edge and dipole radiation.
Grounded enclosures are recommended for applications that use
these devices. If grounded enclosures are not possible, good RF
design practices should be followed in the layout of the PCB.
See Application Note AN-0971, Control of Radiated Emissions
with isoPower Devices, for more information.
INSULATION LIFETIME
All insulation structures eventually break down when subjected to
voltage stress over a sufficiently long period. The rate of insulation
degradation is dependent on the characteristics of the voltage
waveform applied across the insulation. Analog Devices conducts
an extensive set of evaluations to determine the lifetime of the
insulation structure within the ADM2582E/ADM2587E.
Accelerated life testing is performed using voltage levels higher
than the rated continuous working voltage. Acceleration factors for
several operating conditions are determined, allowing calculation
of the time to failure at the working voltage of interest. The values
shown in Table 9 summarize the peak voltages for 50 years of
service life in several operating conditions. In many cases, the
working voltage approved by agency testing is higher than the
50-year service life voltage. Operation at working voltages higher
than the service life voltage listed leads to premature insulation
failure.
The insulation lifetime of the ADM2582E/ADM2587E depends
on the voltage waveform type imposed across the isolation barrier.
The iCoupler insulation structure degrades at different rates,
depending on whether the waveform is bipolar ac, unipolar ac,
or dc. Figure 36, Figure 37, and Figure 38 illustrate these different
isolation voltage waveforms.
Bipolar ac voltage is the most stringent environment. A 50-year
operating lifetime under the bipolar ac condition determines
the Analog Devices recommended maximum working voltage.
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