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| 型号： | ADM691ARZ-REEL |
| 厂商： | Analog Devices Inc |
| 文件页数： | 10/12页 |
| 文件大小： | 0K |
| 描述： | IC SUPERVISOR MPU 4.65V 16SOIC |
| 标准包装： | 1,000 |
| 类型： | 备用电池电路 |
| 监视电压数目： | 1 |
| 输出： | 开路漏极，推挽式 |
| 复位： | 高有效/低有效 |
| 复位超时： | 最小为 35 ms |
| 电压 - 阀值： | 4.65V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SOIC W |
| 包装： | 带卷 (TR) |
ADM691A/ADM693A/ADM800L/M
APPLICATIONS INFORMATION
INCREASING THE DRIVE CURRENT
INPUT
POWER
TO
If the continuous output current requirements at V OUT exceeds
250 mA or if a lower V CC –V OUT voltage differential is desired, an
external PNP pass transistor may be connected in parallel with
the internal transistor. The BATT ON output can drive the
base of the external transistor via a current limiting transistor.
R1
R2
1.25V
PFI
(PFO)
R3
μP NMI
+5V
INPUT
PNP
TRANSISTOR
V H = 1.25 1+
R2+R3
R2 × R3
R1
POWER
0.1μF
0.1μF
5V
V L = 1.25+R1
1.25 V CC –1.25
R2 R3
BATTERY
V CC
V BATT
BATT
ON
V OUT
PFO
0V
0V
V L
V M
V MID = 1.25
R1+R2
R2
V IN
Figure 21. Increasing the Drive Current
Using a Rechargeable Battery for Backup
If a capacitor or a rechargeable battery is used for backup, then
the charging resistor should be connected to V OUT since this
eliminates the discharge path that would exist during power
down if the resistor were connected to V CC.
Figure 23. Adding Hysteresis to the Power Fail Comparator
Typical Operating Circuit
A typical operating circuit is shown in Figure 24. The circuit
features power supply monitoring, battery backup switching
and watchdog timing.
CMOS RAM is powered from V OUT . When 5 V power is
+5V
INPUT
POWER
0.1μF
I=
V OUT – V BATT
R
R
0.1μF
present, this is routed to V OUT . If V CC fails, then V BATT is
routed to V OUT . V OUT can supply up to 250 mA from V CC , but
if more current is required, an external PNP transistor can be
added. When V CC is higher than V BATT and the reset threshold,
BATT ON goes low, providing base drive for the external tran-
RECHARGEABLE
BATTERY
V CC
V BATT
ADM69_A
ADM800_
V OUT
sistor. When V CC is lower than V BATT and the reset threshold,
an internal 7 ? . MOSFET connects the backup battery to
V OUT .
Reset Output
Figure 22. Rechargeable Battery
Adding Hysteresis to the Power Fail Comparator
For increased noise immunity, hysteresis may be added to the
power fail comparator. Since the comparator circuit is noninverting,
hysteresis can be added simply by connecting a resistor between
the PFO output and the PFI input as shown in Figure 23. When
PFO is low, resistor R3 sinks current from the summing junction
at the PFI pin. When PFO is high, R3 sources current into the
PFI summing junction. This results in differing trip levels for the
comparator. Resistors R1 and R2 therefore set the trip point
while R3 adds hysteresis. R3 should be larger than 10 k ? so that
it does not cause excessive loading on the PFO output. Addi-
tional noise rejection and filtering may be achieved by adding a
capacitor from PFI to GND.
The internal voltage detector monitors V CC and generates a
RESET output to hold the microprocessor’s RESET line low
when V CC is below the reset threshold. An internal timer holds
RESET low for 200 ms after V CC rises above the threshold.
This prevents repeated toggling of RESET even if the 5 V
power drops out and recovers with each power line cycle.
Early Power Fail Detector
The input power line is monitored via a resistive potential di-
vider connected to the Power Fail Input (PFI). When the volt-
age at PFI falls below 1.25 V, the Power Fail Output ( PFO )
drives the processor’s NMI input low. If a Power Fail threshold
of 7 V is set with resistors R1 and R2, the microprocessor will
have the time when V CC drops below 7 V to save data into
RAM. Power supply capacitance will extend the time available.
This will allow more time for microprocessor housekeeping
tasks to be completed before power is lost.
–10 –
REV. 0
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