参数资料
型号: ADM693ANZ
厂商: Analog Devices Inc
文件页数: 10/16页
文件大小: 0K
描述: IC SUPER MPU 4.4 100MA WD 16DIP
标准包装: 25
类型: 备用电池电路
监视电压数目: 1
输出: 开路漏极,推挽式
复位: 高有效/低有效
复位超时: 最小为 35 ms
电压 - 阀值: 4.4V
工作温度: -40°C ~ 85°C
安装类型: 通孔
封装/外壳: 16-DIP(0.300",7.62mm)
供应商设备封装: 16-PDIP
包装: 管件
产品目录页面: 799 (CN2011-ZH PDF)
ADM690–ADM695
+APPLICATION INFORMATION
Increasing the Drive Current
If the continuous output current requirements at V OUT exceed
100 mA or if a lower V CC –V OUT voltage differential is desired,
When PFO is low, resistor R 3 s inks current from the summing
junction at the PFI pin. When PFO is high, the series combina-
tion of R 3 and R 4 source current into the PFI summing junc-
tion. This results in differing trip levels for the comparator.
an external PNP pass transistor may be connected in parallel
with the internal transistor. The BATT ON output (ADM691/
ADM693/ADM695) can directly drive the base of the external
transistor.
+7V TO +15V
INPUT
POWER
7805
+5V
V CC
R 4
PNP TRANSISTOR
R 1
1.3V
PFO
+5V
INPUT
POWER
0.1 μ F
0.1 μ F
PFI
TO
μ P NMI
R 2
ADM69x
BATTERY
V CC
V BATT
BATT
ON
ADM691
ADM693
V OUT
R 3
ADM695
5V
Figure 17. Increasing the Drive Current
Using a Rechargeable Battery for Back Up
PFO
If a capacitor or a rechargeable battery is used for back up then
the charging resistor should be connected to V OUT since this
eliminates the discharge path that would exist during power
0V
0V
V L
V IN
V H
+5V
0.1 μ F
R
R 1
(
)
V H = 1.3V 1+ –– 1 – + –––
(
V L = 1.3V 1+ ––– – –––––––––––––
down if the resistor is connected to V CC .
I = V OUT – V BATT
R
INPUT
POWER
0.1 μ F
R
R 2 R 3
R 1 R 1 (5V – 1.3V)
R 2 1.3V (R 3 + R 4 )
)
ASSUMING R 4 < < R 3 THEN
(
HYSTERESIS V H – V L = 5V ––– 1
V CC
V OUT
R
R 2
)
V BATT
Figure 19. Adding Hysteresis to the Power Fail Comparator
RECHARGEABLE
BATTERY
ADM69x
Monitoring the Status of the Battery
The power fail comparator can be used to monitor the status of
the backup battery instead of the power supply if desired. This
is shown in Figure 20. The PFI inpu t samples the battery volt-
age and generates an active low PFO signal when the battery
Figure 18. Rechargeable Battery
Adding Hysteresis to the Power Fail Comparator
For increased noise immunity, hysteresis may be added to the
power fail comparator. Since the comparator circuit is nonin-
verting, hysteresis can be added simply by connecting a resistor be-
tween the PFO output and the PFI input as shown in Figure 19.
voltage drops below a chosen threshold. It may be necessary to
apply a test load in order to determine the loaded battery volt-
age. This can be done under processor control using CE OUT.
Since CE OUT is forced high during the battery backup mode, the
test load will not be applied to the battery while it is in use, even
if the microprocessor is not powered.
–10 –
REV. A
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ADM693ANZ 制造商:Analog Devices 功能描述:IC SUPERVISORY CIRCUIT
ADM693AQ 制造商:AD 制造商全称:Analog Devices 功能描述:Microprocessor Supervisory Circuits
ADM693AR 功能描述:IC SUPER MPU 4.4 100MA WD 16SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 监控器 系列:- 标准包装:1 系列:- 类型:简单复位/加电复位 监视电压数目:1 输出:开路漏极或开路集电极 复位:高有效 复位超时:- 电压 - 阀值:1.8V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:6-TSOP(0.059",1.50mm 宽)5 引线 供应商设备封装:5-TSOP 包装:剪切带 (CT) 其它名称:NCP301HSN18T1GOSCT
ADM693AR-REEL 功能描述:IC SUPERVISOR MPU 4.4V WD 16SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 监控器 系列:- 标准包装:400 系列:- 类型:备用电池电路 监视电压数目:1 输出:开路漏极,推挽式 复位:高有效/低有效 复位超时:最小为 35 ms 电压 - 阀值:4.65V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:16-SOIC(0.295",7.50mm 宽) 供应商设备封装:16-SOIC W 包装:带卷 (TR) 其它名称:ADM691ARZ-REEL7TR
ADM693ARZ 功能描述:IC SUPER MPU 4.4 100MA WD 16SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - 监控器 系列:- 标准包装:100 系列:- 类型:简单复位/加电复位 监视电压数目:1 输出:开路漏极,开路漏极 复位:高有效/低有效 复位超时:最小为 250 ms 电压 - 阀值:4.37V,4.62V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:管件 产品目录页面:1337 (CN2011-ZH PDF)