参数资料
型号: ADN2830ACPZ32
厂商: Analog Devices Inc
文件页数: 5/10页
文件大小: 0K
描述: IC LASR CTRLR 1CHAN 5.5V 32LFCSP
标准包装: 1
类型: 激光二极管控制器(光纤)
通道数: 1
电源电压: 4.5 V ~ 5.5 V
电流 - 电源: 25mA
电流 - 偏置: 200mA
工作温度: -40°C ~ 85°C
封装/外壳: 32-VFQFN 裸露焊盘,CSP
供应商设备封装: 32-LFCSP-VQ(5x5)
包装: 托盘
安装类型: 表面贴装
产品目录页面: 788 (CN2011-ZH PDF)
ADN2830
GENERAL
Laser diodes have current-in to light-out transfer functions as
shown in Figure 1. Two key characteristics of this transfer func-
Example:
I FAIL = 50 mA , N = 1 ∴ I DEGRADE = 45 mA
= = 250 μ A
tion are the threshold current, I TH , and slope in the linear region
beyond the threshold current, referred to as slope efficiency (LI).
I ASET =
I BIASTRIP
N × 200
50 mA
200
= = 4 . 92 k Ω
* R ASET =
1.23 V
I ASET
1 . 23
250 μ A
The laser degrade alarm, DEGRADE, gives a warning of imminent
P AV
I
P
LI =
P
I
laser failure if the laser diode degrades further or environmental condi-
tions continue to stress the laser diode, e.g., increasing temperature.
The laser fail alarm, FAIL, is activated when:
?
The ASET threshold is reached.
I TH
CURRENT
?
The ALS pin is set high. This shuts off the modulation and
R PSET =
Figure 1.  Laser Transfer Function
CONTROL
A monitor photodiode (MPD) is required to control the laser
diode. The MPD current is fed into the ADN2830 to control
the power, continuously adjusting the bias current in response
to the laser’s changing threshold current and light to current
(LI) slope (slope efficiency).
The ADN2830 uses automatic power control (APC) to maintain
a constant power over time and temperature.
The average power is controlled by the R PSET resistor
connected between the PSET pin and ground. The PSET pin
is kept 1.23 V above GND. For an initial setup, the R PSET resis-
tor can be calculated using the following formula.
1.23 V
I AV
where I AV is average MPD current.
Note the I PSET will change from device to device. It is not
required to know exact values for LI and MPD optical coupling.
bias currents to the laser diode, resulting in the MPD current
dropping to zero.
DEGRADE will only be raised when the bias current exceeds
90% of the ASET current.
MONITOR CURRENTS
IBMON and IMPDMON are current controlled current sources
from V CC . They mirror the bias and MPD current for increased
monitoring functionality. An external resistor to GND gives a
voltage proportional to the current monitored. If the IMPDMON
function is not used, the IMPD pin must be grounded and the
monitor photodiode must be tied directly to the PSET pin.
AUTOMATIC LASER SHUTDOWN
When ALS is logic high, the bias current is turned off. Correct
operation of ALS can be confirmed by the fail alarm being
raised when ALS is asserted. Note that this is the only time
DEGRADE will be low while FAIL is high.
MODE
The MODE feature on the ADN2830 allows the user to operate
more than one ADN2830 in parallel current boosting mode to
LOOP BANDWIDTH SELECTION
achieve up to N
200 mA of bias current ( N is the number of
Capacitor values greater than 22 nF are used to set the actual
loop bandwidth. This capacitor is placed between the PAVCAP
pin and ground. It is important that the capacitor is a low leak-
age multilayer ceramic with an insulation resistance greater than
ADN2830s in parallel). When using parallel boosting mode, one
device is run as the master, the other as the slave. The MODE
pin on the master is tied to ALS and the MODE pin on the
slave is tied high (see Figure 3 for reference circuit).
100 G Ω or a time constant of 1000 sec, whichever is less.
ALARM INTERFACES
ALARMS
The ADN2830 has two active high alarms, DEGRADE and
FAIL. A resistor between ground and the ASET pin is used to
set the current at which these alarms are raised. The current
The FAIL and DEGRADE outputs have an internal 30 k Ω
pull-up resistor that is used to pull the digital high value to V CC.
However, the alarm output may be overdriven with an external
resistor allowing the alarm interfacing to non-V CC levels.
through the ASET resistor is a ratio of ( N
200):1 to the FAIL
Non-V CC alarm output levels must be below the V CC used for
alarm threshold ( N is the number of ADN2830s in parallel).
The DEGRADE alarm will be raised at 90% of this level.
* The smallest value for R ASET is 1.2 k Ω , as this corresponds to the IBIAS
the ADN2830.
maximum of N
REV. B
200 mA.
–5 –
相关PDF资料
PDF描述
ADN2841ACPZ-48 IC LSR DRVR 2.7GBPS 5.5V 48LFCSP
ADN2847ACPZ-32 IC LSR DRVR 3.3GBPS 3.6V 32LFCSP
ADN2848ACPZ-32-RL7 IC LASER DRIVER 1.25GBPS 32LFCSP
ADN2870ACPZ-RL7 IC LSR DRVR 3.3GPBS 3.6V 24LFCSP
ADN2871ACPZ-RL7 IC LASER DRIVER 4.25GBPS 24LFCSP
相关代理商/技术参数
参数描述
ADN2830-EVALZ 制造商:Analog Devices 功能描述:EVAL KIT FOR CONTINUOUS WAVE LASER AVERAGE PWR CNTRLR - Bulk
ADN2841 制造商:AD 制造商全称:Analog Devices 功能描述:Dual-Loop 50 Mbps.2.7 Gbps Laser Diode Driver
ADN2841ACP-32 制造商:Analog Devices 功能描述:Laser Driver 2.7Gbps 1-CH 32-Pin LFCSP EP 制造商:Rochester Electronics LLC 功能描述:MULTI RATE 2.5 GB/S LASER DIODE DRIVER - Bulk 制造商:Analog Devices 功能描述:IC CONTROLLER WAVE LASER
ADN2841ACP-32-RL 制造商:Analog Devices 功能描述:Laser Driver 2.7Gbps 1-CH 32-Pin LFCSP EP T/R
ADN2841ACP-32-RL7 制造商:Analog Devices 功能描述:Laser Driver 2.7Gbps 1-CH 32-Pin LFCSP EP T/R