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| 型号： | ADN2872ACPZ-RL |
| 厂商： | Analog Devices Inc |
| 文件页数： | 14/20页 |
| 文件大小： | 0K |
| 描述： | IC LASR DVR 3.3GBPS 3.3V 24LFCSP |
| 标准包装： | 1 |
| 类型： | 激光二极管驱动器 |
| 数据速率： | 3.3Gbps |
| 通道数： | 1 |
| 电源电压： | 3 V ~ 3.6 V |
| 电流 - 电源： | 30mA |
| 电流 - 调制： | 90mA |
| 电流 - 偏置： | 100mA |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 24-VFQFN 裸露焊盘，CSP |
| 供应商设备封装： | 24-LFCSP-VQ（4x4） |
| 包装： | 标准包装 |
| 安装类型： | 表面贴装 |
| 产品目录页面： | 788 (CN2011-ZH PDF) |
| 其它名称： | ADN2872ACPZ-RLDKR |
ADN2872
PHOTODIODE
V CC
PAVSET
ADN2872
POWER CONSUMPTION
The ADN2872 die temperature must be kept below 125°C. The
LFCSP package has an exposed paddle that should be connected
such that it is at the same potential as the ADN2872 ground pins.
Power consumption can be calculated as:
MICROCONVERTER
ADC
INPUT
R
I CC = I CC min + 0.3 I MOD
P = V CC × I CC + ( I BIAS × V BIAS_PIN ) + I MOD ( V MODP_PIN +
Figure 31. Single Measurement of I MPD Across a
Sense Resistor in Resistor Setpoint I MPD Monitoring
LOOP BANDWIDTH SELECTION
To ensure that the ADN2872 control loops have sufficient
bandwidth, the average power loop capacitor (PAVCAP) and
the extinction ratio loop capacitor (ERCAP) are calculated
using the laser slope efficiency and the average power required.
For resistor setpoint control,
V MODN_PIN )/2
T DIE = T AMBIENT + θ JA × P
where:
with I BIAS = I MOD = 0.
T DIE is the die temperature.
T AMBIENT is the ambient temperature.
V BIAS_PIN is the voltage at the IBIAS pin.
V MODP_PIN is the voltage at the IMODP pin.
PAVCAP ? 3 . 2 ? 10 ? 6 ?
LI
P AV
(Farad)
V MODN_PIN is the voltage at the IMODN pin.
Thus, the maximum combination of I BIAS + I MOD must be
ERCAP ?
PAVCAP
2
(Farad)
calculated.
AUTOMATIC LASER SHUTDOWN (Tx_DISABLE)
For voltage setpoint control,
ALS (Tx_DISABLE) is an input that is used to shut down the
PAVCAP ? 1 . 28 ? 10 ? 6 ?
LI
P AV
(Farad)
transmitter optical output. The ALS pin is pulled up internally
with a 6 kΩ resistor and conforms to SFP MSA specifications.
When ALS is logic high or open, both the bias and modulation
ERCAP ?
PAVCAP
2
(Farad)
currents are turned off.
BIAS AND MODULATION MONITOR CURRENTS
LI ?
V CC ? V IBIAS
where:
P AV (mW) is the average power required.
LI (mW/mA) is the typical slope efficiency at 25°C of a batch of
lasers that are used in a design.
The preceding capacitor estimation formulas are used to obtain
a centered value for the particular type of laser that is used in a
design and average power setting. Laser LI can vary by a factor
of 7 between different physical lasers of the same type and across
temperature without the need to recalculate the PAVCAP and
ERCAP values. In the ac coupling configuration, LI can be
calculated as
P1 ? P0
(mW/mA)
I MOD
where P1 is the optical power (mW) at the one level, and P0 is
the optical power (mW) at the zero level.
These capacitors are placed between the PAVCAP and ERCAP
pins and ground. It is important that these capacitors are low
leakage multilayer ceramics with an insulation resistance
greater than 100 GΩ or a time constant of 1000 sec, whichever
is less. The capacitor tolerance can be ±30% from the calculated
value to the available off-the-shelf value, including the capacitor’s
own tolerance.
IBMON and IMMON are current-controlled current sources
that mirror a ratio of the bias and modulation current. The
monitor bias current, IBMON, and the monitor modulation
current, IMMON, should both be connected to ground through
a resistor to provide a voltage proportional to the bias current
and modulation current, respectively. When using a micro-
controller, the voltage developed across these resistors can be
connected to two of the ADC channels, making available a
digital representation of the bias and modulation current.
IBIAS PIN
ADN2872 has one on-chip, 800 Ω ? pull-up resistor. The current
sink from this resistor is V IBIAS dependent.
I UP ? (mA)
0 . 8
where V IBIAS is the voltage measured at the IBIAS pin after setup
of one laser bias current, I BIAS . Usually, when set up, a maximum
laser bias current of 100 mA results in a V IBIAS of about 1.2 V. In
a worst-case scenario, V CC = 3.6 V, V IBIAS = 1.2 V, and I UP ≤ 3 mA.
This on-chip resistor helps to damp out the low frequency
oscillation observed from some inexpensive lasers. If the on-
chip resistance does not provide enough damping, one external
Rev. 0 | Page 14 of 20
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ADN2873 | 制造商:AD 制造商全称:Analog Devices 功能描述:3.3 V, 50 Mbps to 4.25 Gbps, Single-Loop, Laser Diode Driver |
| ADN2873ACPZ | 功能描述:IC LASER DRIVER 4.25GBPS 24LFCSP RoHS:是 类别:集成电路 (IC) >> PMIC - 激光驱动器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:60 系列:- 类型:激光二极管驱动器 数据速率:- 通道数:4 电源电压:3.3V 电流 - 电源:- 电流 - 调制:- 电流 - 偏置:- 工作温度:0°C ~ 70°C 封装/外壳:40-TQFN 裸露焊盘 供应商设备封装:40-TQFN EP 包装:托盘 安装类型:表面贴装 |
| ADN2873ACPZ-R7 | 功能描述:IC LASER DRIVER 4.25GBPS 24LFCSP RoHS:是 类别:集成电路 (IC) >> PMIC - 激光驱动器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:60 系列:- 类型:激光二极管驱动器 数据速率:- 通道数:4 电源电压:3.3V 电流 - 电源:- 电流 - 调制:- 电流 - 偏置:- 工作温度:0°C ~ 70°C 封装/外壳:40-TQFN 裸露焊盘 供应商设备封装:40-TQFN EP 包装:托盘 安装类型:表面贴装 |
| ADN2873ACPZ-RL | 功能描述:IC LASER DRIVER 4.25GBPS 24LFCSP RoHS:是 类别:集成电路 (IC) >> PMIC - 激光驱动器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:60 系列:- 类型:激光二极管驱动器 数据速率:- 通道数:4 电源电压:3.3V 电流 - 电源:- 电流 - 调制:- 电流 - 偏置:- 工作温度:0°C ~ 70°C 封装/外壳:40-TQFN 裸露焊盘 供应商设备封装:40-TQFN EP 包装:托盘 安装类型:表面贴装 |
| ADN2873ACPZ-RL7 | 制造商:AD 制造商全称:Analog Devices 功能描述:3.3 V, 50 Mbps to 4.25 Gbps, Single-Loop, Laser Diode Driver |
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