参数资料
型号: ADP198ACBZ-11-R7
厂商: Analog Devices Inc
文件页数: 5/16页
文件大小: 0K
描述: IC HIGH-SIDE LOAD SWITCH 4WLCSP
标准包装: 3,000
类型: 高端
输入类型: 非反相
输出数: 1
导通状态电阻: 40 毫欧
电流 - 输出 / 通道: 1A
电源电压: 1.65 V ~ 6.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 4-UFBGA,WLCSP
供应商设备封装: 4-WLCSP
包装: 带卷 (TR)
Data Sheet
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
VIN to GND Pins ?0.3 V to +7 V
VOUT to GND Pins ?0.3 V to +7 V
EN to GND Pins ?0.3 V to +7 V
Continuous Drain Current
T A = 25°C ±1000 mA
T A = 85°C ±1000 mA
T A = 125°C ±600mA
Storage Temperature Range ?65°C to +150°C
Operating Junction Temperature Range ?40°C to +125°C
Soldering Conditions JEDEC J-STD-020
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL DATA
Absolute maximum ratings apply individually only, not in
combination. The ADP198 can be damaged if the junction
temperature limits are exceeded. Monitoring ambient temperature
does not guarantee that T J is within the specified temperature
limits. In applications with high power dissipation and poor
thermal resistance, the maximum ambient temperature may
need to be derated.
In applications with moderate power dissipation and low
printed circuit board (PCB) thermal resistance, the maximum
ambient temperature can exceed the maximum limit as long
ADP198
The junction-to-ambient thermal resistance (θ JA ) of the package
is based on modeling and calculation using a 4-layer board. The
junction-to-ambient thermal resistance is highly dependent on
the application and board layout. In applications where high
maximum power dissipation exists, close attention to thermal
board design is required. The value of θ JA may vary, depending on
PCB material, layout, and environmental conditions. The speci-
fied values of θ JA are based on a 4-layer, 4 inch × 3 inch PCB. Refer
to JESD 51-7 and JESD 51-9 for detailed information regarding
board construction. For additional information, see the AN-617
Application Note , MicroCSP ? Wafer Level Chip Scale Package .
Ψ JB is the junction-to-board thermal characterization parameter
with units of °C/W. The Ψ JB of the package is based on modeling
and calculation using a 4-layer board. The JESD51-12, Guidelines
for Reporting and Using Package Thermal Information , states that
thermal characterization parameters are not the same as thermal
resistances. Ψ JB measures the component power flowing through
multiple thermal paths rather than a single path as in thermal
resistance, θ JB . Therefore, Ψ JB thermal paths include convection
from the top of the package as well as radiation from the package,
factors that make Ψ JB more useful in real-world applications.
Maximum junction temperature (T J ) is calculated from the
board temperature (T B ) and power dissipation (P D ) using the
formula
T J = T B + ( P D × Ψ JB )
Refer to JESD51-8, JESD51-9, and JESD51-12 for more detailed
information about Ψ JB .
THERMAL RESISTANCE
θ JA and Ψ JB are specified for the worst-case conditions, that is, a
device soldered in a circuit board for surface-mount packages.
as the junction temperature is within specification limits. The
junction temperature (T J ) of the device is dependent on the
ambient temperature (T A ), the power dissipation of the device
(P D ), and the junction-to-ambient thermal resistance of the
package (θ JA ).
Table 3. Thermal Resistance
Package Type
4-Ball, 0.5 mm Pitch WLCSP
8-Lead, 2 mm × 2 mm LFCSP
θ JA
260
72.1
θ JC
4
42.3
Ψ JB
58.4
47.1
Unit
°C/W
°C/W
Maximum junction temperature (T J ) is calculated from the
ambient temperature (T A ) and power dissipation (P D ) using the
ESD CAUTION
formula
T J = T A + ( P D × θ JA )
Rev. G | Page 5 of 16
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