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| 型号： | ADP3418KRZ-REEL1 |
| 厂商： | Analog Devices, Inc. |
| 英文描述： | Dual Bootstrapped 12 V MOSFET Driver with Output Disable |
| 中文描述： | 12伏双自举MOSFET驱动器与输出禁用 |
| 文件页数： | 9/16页 |
| 文件大小： | 323K |
| 代理商： | ADP3418KRZ-REEL1 |
ADP3418
THEORY OF OPERATION
The ADP3418 is a dual MOSFET driver optimized for driving
two N-channel MOSFETs in a synchronous buck converter
topology. A single PWM input signal is all that is required to
properly drive the high-side and the low-side MOSFETs. Each
driver is capable of driving a 3 nF load at speeds up to 500 kHz.
Rev. B | Page 9 of 16
A more detailed description of the ADP3418 and its features
follows. Refer to Figure 1.
LOW-SIDE DRIVER
The low-side driver is designed to drive a ground-referenced
N-channel MOSFET. The bias to the low-side driver is internally
connected to the VCC supply and PGND.
When the driver is enabled, the driver’s output is 180 degrees
out of phase with the PWM input. When the ADP3418 is dis-
abled, the low-side gate is held low.
HIGH-SIDE DRIVER
The high-side driver is designed to drive a floating N-channel
MOSFET. The bias voltage for the high-side driver is developed
by an external bootstrap supply circuit, which is connected
between the BST and SW pins.
The bootstrap circuit comprises a diode, D1, and bootstrap
capacitor, C
BST1
. C
BST2
and R
BST
are included to reduce the high-
side gate drive voltage and limit the switch node slew-rate
(referred to as a Boot-Snap circuit, see the Application
Information section for more details). When the ADP3418 is
starting up, the SW pin is at ground, so the bootstrap capacitor
will charge up to VCC through D1. When the PWM input goes
high, the high-side driver will begin to turn on the high-side
MOSFET, Q1, by pulling charge out of C
BST1
and C
BST2
. As Q1
turns on, the SW pin will rise up to V
IN
, forcing the BST pin to
V
IN
+ V
C(BST)
, which is enough gate-to-source voltage to hold Q1
on. To complete the cycle, Q1 is switched off by pulling the gate
down to the voltage at the SW pin. When the low-side MOSFET,
Q2, turns on, the SW pin is pulled to ground. This allows the
bootstrap capacitor to charge up to VCC again.
The high-side driver’s output is in phase with the PWM input.
When the driver is disabled, the high-side gate is held low.
OVERLAP PROTECTION CIRCUIT
The overlap protection circuit prevents both of the main power
switches, Q1 and Q2, from being on at the same time. This is
done to prevent shoot-through currents from flowing through
both power switches and the associated losses that can occur
during their on/off transitions. The overlap protection circuit
accomplishes this by adaptively controlling the delay from the
Q1 turn off to the Q2 turn on, and by internally setting the
delay from the Q2 turn off to the Q1 turn on.
To prevent the overlap of the gate drives during the Q1 turn off
and the Q2 turn on, the overlap circuit monitors the voltage at
the SW pin. When the PWM input signal goes low, Q1 will
begin to turn off (after propagation delay). Before Q2 can turn
on, the overlap protection circuit makes sure that SW has first
gone high and then waits for the voltage at the SW pin to fall
from V
IN
to 1 V. Once the voltage on the SW pin has fallen to
1 V, Q2 begins turn on. If the SW pin had not gone high first,
then the Q2 turn on is delayed by a fixed 120 ns. By waiting for
the voltage on the SW pin to reach 1 V or for the fixed delay
time, the overlap protection circuit ensures that Q1 is off before
Q2 turns on, regardless of variations in temperature, supply
voltage, input pulse width, gate charge, and drive current. If SW
does not go below 1 V after 240 ns, DRVL will turn on. This can
occur if the current flowing in the output inductor is negative
and is flowing through the high-side MOSFET body diode.
To prevent the overlap of the gate drives during the Q2 turn off
and the Q1 turn on, the overlap circuit provides an internal
delay that is set to 40 ns. When the PWM input signal goes high,
Q2 will begin to turn off (after a propagation delay), but before
Q1 can turn on, the overlap protection circuit waits for the
voltage at DRVL to drop to approximately one sixth of V
CC
.
Once the voltage at DRVL has reached this point, the overlap
protection circuit will wait for the 40 ns internal delay time.
Once the delay period has expired, Q1 will begin turn on.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ADP3419 | 制造商:AD 制造商全称:Analog Devices 功能描述:Dual Bootstrapped, High Voltage MOSFET Driver with Output Disable |
| ADP34190091RMZR | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Bootstrapped, High Voltage MOSFET Driver with Output Disable |
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| ADP3419JRMZ | 制造商:Analog Device 功能描述: 制造商:Analog Devices 功能描述:MOSFET Driver, Dual, 10 Pin, Plastic, TSSOP |
| ADP3419JRMZ-REEL | 功能描述:功率驱动器IC DUAL SYNCHRONOUS DRV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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