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参数资料
| 型号： | ADR02BRZ-REEL7 |
| 厂商： | Analog Devices Inc |
| 文件页数： | 4/20页 |
| 文件大小： | 0K |
| 描述： | IC VREF SERIES PREC 5V 8-SOIC |
| 设计资源： | High Accuracy, Bipolar Voltage Output Digital-to-Analog Conversion Using AD5764 (CN0006) 4 mA to 20 mA Process Control Loop Using AD5662 (CN0009) 16-Bit Fully Isolated Voltage Output Module Using AD5662, ADuM1401, and External Amplifiers (CN0063) 16-Bit Fully Isolated 4 mA to 20 mA Output Module Using AD5662, ADuM1401, and External Amplifiers (CN0064) |
| 标准包装： | 1,000 |
| 基准类型： | 串联，精度 |
| 输出电压： | 5V |
| 容差： | ±0.06% |
| 温度系数： | 3ppm/°C |
| 输入电压： | 7 V ~ 36 V |
| 通道数： | 1 |
| 电流 - 静态： | 1mA |
| 电流 - 输出： | 10mA |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 带卷 (TR) |
ADR01/ADR02/ADR03/ADR06
SPECIFICATIONS
ADR01 ELECTRICAL CHARACTERISTICS
V IN = 12.0 V to 36.0 V, V IN = 12.0 V to 24.0 V for ADR01WARZ, T A = 25°C, unless otherwise noted.
Table 2.
Data Sheet
Parameter
OUTPUT VOLTAGE
INITIAL ACCURACY
Symbol
V O
V OERR
Conditions
A and C grades
A and C grades
Min
9.990
Typ
10.000
Max
10.010
10
Unit
V
mV
0.1
%
OUTPUT VOLTAGE
INITIAL ACCURACY
V O
V OERR
B grade
B grade
9.995
10.000
10.005
5
V
mV
0.05
%
OUTPUT VOLTAGE
INITIAL ACCURACY
V O
V OERR
ADR01WARZ
ADR01WARZ
9.986
10.000
10.014
14
V
mV
0.14
%
A grade, 8-lead SOIC, ?40°C < T A < +125°C
A grade, 5-lead TSOT, –40°C < T A < +125°C
A grade, 5-lead SC70, –40°C < T A < +125°C
B grade, 8-lead SOIC, –40°C < T A < +125°C
B grade, 5-lead TSOT, –40°C < T A < +125°C
B grade, 5-lead SC70, –40°C < T A < +125°C
C grade, 8-lead SOIC, –40°C < T A < +125°C
3
1
10
10
25
25
3
9
9
40
ppm/°C
ppm/°C
ppm/°C
ppm/°C
ppm/°C
ppm/°C
ppm/°C
DROPOUT VOLTAGE
V DO
2
V
LINE REGULATION
?V O /?V IN
V IN = 12.0 V to 36.0 V, V IN = 12.0 V to 26.0 V for
7
30
ppm/V
ADR01WARZ, –40°C < T A < +125°C
LOAD REGULATION
?V O /?I LOAD
I LOAD = 0 mA to 10 mA, –40°C < T A < +125°C,
40
70
ppm/mA
V IN = 15.0 V
QUIESCENT CURRENT
VOLTAGE NOISE
VOLTAGE NOISE DENSITY
TURN-ON SETTLING TIME
LONG-TERM STABILITY 1
OUTPUT VOLTAGE HYSTERESIS
RIPPLE REJECTION RATIO
SHORT CIRCUIT TO GND
I IN
e N p-p
e N
t R
?V O
?V O_HYS
RRR
I SC
No load, –40°C < T A < +125°C
0.1 Hz to 10.0 Hz
1 kHz
1000 hours
f IN = 10 kHz
0.65
20
510
4
50
70
?75
30
1
mA
μV p-p
nV/√Hz
μs
ppm
ppm
dB
mA
TEMPERATURE SENSOR
Voltage Output at TEMP Pin
Temperature Sensitivity
V TEMP
TCV TEMP
550
1.96
mV
mV/°C
1
The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.
Rev. R | Page 4 of 20
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