- 您现在的位置：买卖IC网 > PDF目录17080 > ADR293GRUZ-REEL7 (Analog Devices Inc)IC VREF SERIES PREC 5V 8-TSSOP PDF资料下载
参数资料
| 型号： | ADR293GRUZ-REEL7 |
| 厂商： | Analog Devices Inc |
| 文件页数： | 10/12页 |
| 文件大小： | 0K |
| 描述： | IC VREF SERIES PREC 5V 8-TSSOP |
| 标准包装： | 1,000 |
| 系列： | XFET® |
| 基准类型： | 串联，精度 |
| 输出电压： | 5V |
| 容差： | ±0.2% |
| 温度系数： | 30ppm/°C |
| 输入电压： | 6 V ~ 15 V |
| 通道数： | 1 |
| 电流 - 静态： | 15µA |
| 电流 - 输出： | 5mA |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP |
| 包装： | 带卷 (TR) |
ADR293
THEORY OF OPERATION
The ADR293 uses a new reference generation technique known
as XFET, which yields a reference with low noise, low supply
current, and very low thermal hysteresis.
The core of the XFET reference consists of two junction field
effect transistors, one of which has an extra channel implant to
raise its pinch-off voltage. By running the two JFETs at the same
drain current, the difference in pinch-off voltage can be amplified
and used to form a highly stable voltage reference. The intrinsic
reference voltage is around 0.5 V with a negative temperature
DEVICE POWER DISSIPATION CONSIDERATIONS
The ADR293 is guaranteed to deliver load currents to 5 mA
with an input voltage that ranges from 5.5 V to 15 V. When
this device is used in applications with large input voltages,
care should be exercised to avoid exceeding the published
specifications for maximum power dissipation or junction
temperature that could result in premature device failure.
The following formula should be used to calculate a device’s
maximum junction temperature or dissipation:
coefficient of about –120 ppm/K. This slope is essentially locked
to the dielectric constant of silicon and can be closely compen-
sated by adding a correction term generated in the same fashion
P D =
T J ? T A
θ JA
as the proportional-to-temperature (PTAT) term used to
compensate band gap references. The big advantage over a band
gap reference is that the intrinsic temperature coefficient is
some 30 times lower (therefore, less correction is needed) and
this results in much lower noise, because most of the noise of a
band gap reference comes from the temperature compensation
circuitry.
The simplified schematic in Figure 21 shows the basic topology
of the ADR293. The temperature correction term is provided by
a current source with value designed to be proportional to
absolute temperature. The general equation is
where:
T J and T A are the junction temperature and ambient
temperature, respectively.
P D is the device power dissipation.
θ JA is the device package thermal resistance.
BASIC VOLTAGE REFERENCE CONNECTIONS
References, in general, require a bypass capacitor connected
illustrates the basic configuration for the ADR293. Note that the
decoupling capacitors are not required for circuit stability.
? + ( I PTAT ) ( R3 )
V OUT = Δ V P ?
? R1 + R2 + R3 ?
? R1 ?
where:
ΔV P is the difference in pinch-off voltage between the two FETs.
+
10μF
0.1μF
NC 1
2
NC 3
4
ADR293
8
7
6
5
NC
NC
V OUT
NC
0.1μF
I PTAT is the positive temperature coefficient correction current.
The process used for the XFET reference also features vertical
NPN and PNP transistors, the latter of which are used as output
devices to provide a very low dropout voltage.
V IN
I 1 I 1
NC = NO CONNECT
Figure 22. Basic Voltage Reference Configuration
NOISE PERFORMANCE
The noise generated by the ADR293 is typically less than
15 μV p-p over the 0.1 Hz to 10 Hz band. The noise measure-
ment is made with a band-pass filter made of a 2-pole high-pass
filter with a corner frequency at 0.1 Hz and a 2-pole low-pass
1
? V P
R1
R2
V OUT
I PTAT
filter with a corner frequency at 10 Hz.
TURN-ON TIME
Upon application of power (cold start), the time required for
the output voltage to reach its final value within a specified
R3
error band is defined as the turn-on settling time. Two
1 EXTRA CHANNEL IMPLANT
GND
components normally associated with this are the time for the
× ? V P + I PTAT × R3
V OUT =
R1 + R2 + R3
R1
Figure 21. Simplified Schematic
active circuits to settle and the time for the thermal gradients on
the chip to stabilize. Figure 15 shows the typical turn-on time
for the ADR293.
Rev. D | Page 10 of 12
相关PDF资料 |
PDF描述 |
|---|---|
| EEC19DREH-S93 | CONN EDGECARD 38POS .100 EYELET |
| GEC22DRTF-S13 | CONN EDGECARD 44POS .100 EXTEND |
| VE-B0J-EY | CONVERTER MOD DC/DC 36V 50W |
| 101-1050 | KIT DEV RABBITCORE RCM3750 |
| RBB13DHRD | CONN CARD EXTEND 26POS .050" |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ADR293GRZ | 功能描述:IC VREF SERIES PREC 5V 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - 电压基准 系列:XFET® 标准包装:3,000 系列:- 基准类型:旁路，精度 输出电压:3V 容差:±0.5% 温度系数:100ppm/°C 输入电压:- 通道数:1 电流 - 阴极:82µA 电流 - 静态:- 电流 - 输出:15mA 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:6-TSSOP（5 引线），SC-88A，SOT-353 供应商设备封装:SC-70-5 包装:带卷 (TR) 其它名称:296-20888-2 |
| ADR293GRZ-REEL7 | 功能描述:IC VREF SERIES PREC 5V 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - 电压基准 系列:XFET® 标准包装:2,000 系列:- 基准类型:旁路，可调节，精度 输出电压:1.24 V ~ 16 V 容差:±0.5% 温度系数:- 输入电压:1.24 V ~ 16 V 通道数:1 电流 - 阴极:100µA 电流 - 静态:- 电流 - 输出:20mA 工作温度:-40°C ~ 85°C 安装类型:通孔 封装/外壳:TO-226-3、TO-92-3（TO-226AA）成形引线 供应商设备封装:TO-92-3 包装:带卷 (TR) |
| ADR293GT9 | 制造商:Analog Devices 功能描述: |
| ADR293GT9-REEL | 制造商:Analog Devices 功能描述: |
| ADR293TRU-EP | 制造商:Analog Devices 功能描述:ENHANCED PLASTIC PROCESS - Rail/Tube 制造商:Rochester Electronics LLC 功能描述: 制造商:Analog Devices 功能描述:IC VREF SERIES PREC 5V 8TSSOP |
发布紧急采购，3分钟左右您将得到回复。