参数资料
型号: ADR434ARZ
厂商: Analog Devices Inc
文件页数: 8/24页
文件大小: 0K
描述: IC VREF SERIES PREC 4.096V 8SOIC
标准包装: 98
系列: XFET®
基准类型: 串联,精度
输出电压: 4.096V
容差: ±0.12%
温度系数: 10ppm/°C
输入电压: 6.1 V ~ 18 V
通道数: 1
电流 - 静态: 800µA
电流 - 输出: 30mA
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 管件
产品目录页面: 796 (CN2011-ZH PDF)
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
ADR435 ELECTRICAL CHARACTERISTICS
V IN = 7.0 V to 18 V, I L = 0 mA, T A = 25°C, unless otherwise noted.
Table 6.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
OUTPUT VOLTAGE
V O
A Grade
B Grade
4.994
4.998
5.000
5.000
5.006
5.002
V
V
INITIAL ACCURACY 1
V OERR
A Grade
B Grade
TEMPERATURE COEFFICIENT
TCV O
±6
±0.12
±2
±0.04
mV
%
mV
%
A Grade
B Grade
?40°C < T A < +125°C
?40°C < T A < +125°C
2
1
10
3
ppm/°C
ppm/°C
LINE REGULATION
LOAD REGULATION
QUIESCENT CURRENT
VOLTAGE NOISE
VOLTAGE NOISE DENSITY
TURN-ON SETTLING TIME
LONG-TERM STABILITY 2
OUTPUT VOLTAGE HYSTERESIS
RIPPLE REJECTION RATIO
SHORT CIRCUIT TO GND
SUPPLY VOLTAGE OPERATING RANGE
SUPPLY VOLTAGE HEADROOM
?V O /?V IN
?V O /?I L
?V O /?I L
I IN
e N p-p
e N
t R
?V O
V O_HYS
RRR
I SC
V IN
V IN ? V O
V IN = 7 V to 18 V, ?40°C < T A < +125°C
I L = 0 mA to 10 mA, V IN = 8 V, ?40°C < T A < +125°C
I L = ?10 mA to 0 mA, V IN = 8 V, ?40°C < T A < +125°C
No load, ?40°C < T A < +125°C
0.1 Hz to 10 Hz
1 kHz
C L = 0 μF
1000 hours
f IN = 1 kHz
7.0
2
5
620
8
115
10
40
20
?70
40
20
15
15
800
18
ppm/V
ppm/mA
ppm/mA
μA
μV p-p
nV/√Hz
μs
ppm
ppm
dB
mA
V
V
1
2
Initial accuracy does not include shift due to solder heat effect.
The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.
Rev. J | Page 8 of 24
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