参数资料
型号: ADT7488AARMZ-REEL
厂商: ON Semiconductor
文件页数: 9/13页
文件大小: 356K
描述: IC TEMP SENSOR SST DGTL 10-MSOP
产品变化通告: MFG CHG Notification ADI to ON Semi
标准包装: 3,000
功能: 温度监控系统(传感器)
传感器类型: 内部和外部
感应温度: -40°C ~ 125°C,外部传感器
精确度: ±1.75°C(最小值)
拓扑: ADC,多路复用器,寄存器库
输出类型: Simple Serial Transport?(SST)
输出警报:
输出风扇:
电源电压: 3 V ~ 3.6 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 10-TFSOP,10-MSOP(0.118",3.00mm 宽)
供应商设备封装: 10-MSOP
包装: 带卷 (TR)
ADT7488A
http://onsemi.com
9
12 V, and the processor core voltage (V
CCP
) without any
external components.
To allow for the tolerance of these supply voltages, the
ADC produces a specific output for each nominal input
voltage and therefore has adequate headroom to cope with
overvoltage. The full-scale voltage that can be recorded for
each channel is shown in Table 10.
Table 10. MAXIMUM REPORTED INPUT VOLTAGES
Voltage Channel
Full-scale Voltage
V
CC
4.0 V
2.5 V
4.0 V
V
CCP
4.0 V
Input Circuitry
The internal structure for the analog inputs is shown in
Figure 14. The input circuit consists of an input protection
diode and an attenuator, plus a capacitor that forms a
first-order, low-pass filter to provide input immunity to high
frequency noise.
Figure 14. Internal Structure of Analog Inputs
17.5 kW
52.5 kW
V
CCP
35 pF
45 kW
94 kW
2.5V
IN
30 pF
68 kW
71 kW
3.3V
IN
30 pF
MUX
Voltage Measurement Command Codes
The voltage measurement command codes are detailed in
Table 11. Each voltage measurement has a read length of
two bytes in little endian format (LSB followed by MSB).
All voltages can be read together by addressing Command
Code 0x12 with a read length of 0x06. The data is retrieved
in the order listed in Table 11.
Table 11. VOLTAGE MEASUREMENT COMMAND
CODE
Voltage Channel
Command Code
Returned Data
V
CC
0x12
LSB, MSB
2.5 V
0x13
LSB, MSB
V
CCP
0x14
LSB, MSB
Voltage Data Format
The returned voltage value is in twos complement, 16-bit,
binary format. The format is structured so that voltages in
the range of ?2 V can be reported. In this way, the reported
value represents the number of 1/1024 V in the actual
reading, allowing a resolution of approximately 1 mV.
Table 12. ANALOG-TO-DIGITAL OUTPUT VS. V
IN
Voltage
Twos Complement
LSB
MSB
3.3
0000 1101
0011 0011
3.0
0000 1100
0000 0000
2.5
0000 1010
0000 0000
1.0
0000 0100
0000 0000
0
0000 0000
0000 0000
Temperature Measurement
The   ADT7488A   has   three   dedicated   temperature
measurement channels: one for measuring the temperature
of an on-chip band gap temperature sensor, and two for
measuring the temperature of a remote diode, usually
located in the CPU or GPU.
The ADT7488A monitors one local and two remote
temperature channels. Monitoring of each of the channels is
done in a round-robin sequence. The monitoring sequence
is in the order shown in Table 13.
Table 13. TEMPERATURE MONITORING SEQUENCE
Channel
Number
Measurement
Conversion
Time (ms)
0
Local Temperature
12
1
Remote 1 Temperature
38
2
Remote 2 Temperature
38
Temperature Measurement Method
A simple method for measuring temperature is to exploit
the negative temperature coefficient of a diode by measuring
the base-emitter voltage (V
BE
) of a transistor operated at
constant current. Unfortunately, this technique requires
calibration to null the effect of the absolute value of V
BE
,
which varies from device to device.
The technique used in the ADT7488A measures the
change in V
BE
 when the device is operated at three different
currents.
Figure 15 shows the input signal conditioning used to
measure the output of a remote temperature sensor. This
figure shows the remote sensor as a substrate transistor, which
is   provided   for   temperature   monitoring   on   some
microprocessors, but it could also be a discrete transistor. If
a discrete transistor is used, the collector is not grounded and
should be linked to the base. To prevent ground noise from
interfering with the measurement, the more negative terminal
of the sensor is not referenced to ground, but is biased above
ground by an internal diode at the D1 input. If the sensor is
operating in an extremely noisy environment, C1 can be
added as a noise filter. Its value should not exceed 1,000 pF.
To measure DV
BE
, the operating current through the
sensor is switched between three related currents. Figure 15
shows N1 ?I and N2 ?I as different multiples of the
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