参数资料
型号: ADUM4223CRWZ-RL
厂商: Analog Devices Inc
文件页数: 15/20页
文件大小: 0K
描述: IC 5KV ISO HALF BR DRVR 16SOIC
标准包装: 1,000
系列: *

Data Sheet
APPLICATIONS INFORMATION
PC BOARD LAYOUT
The ADuM3223 / ADuM4223 digital isolators require no exter-
nal interface circuitry for the logic interfaces. Power supply
bypassing is required at the input and output supply pins, as
shown in Figure 19. Use a small ceramic capacitor with a value
between 0.01 μF and 0.1 μF to provide a good high frequency
bypass. On the output power supply pin, V DDA or V DDB , it is
recommended to also add a 10 μF capacitor to provide the
charge required to drive the gate capacitance at the ADuM3223 /
ADuM4223 outputs. On the output supply pin, the bypass
capacitor use of vias should be avoided or multiple vias should
be employed to reduce the inductance in the bypassing. The
total lead length between both ends of the smaller capacitor and
the input or output power supply pin should not exceed 5 mm.
ADuM3223/ADuM4223
Channel-to-channel matching refers to the maximum amount
that the propagation delay differs between channels within a
single ADuM3223 / ADuM4223 component.
Propagation delay skew refers to the maximum amount that
the propagation delay differs between multiple ADuM3223 /
ADuM4223 components operating under the same conditions.
THERMAL LIMITATIONS AND SWITCH LOAD
CHARACTERISTICS
For isolated gate drivers, the necessary separation between the
input and output circuits prevents the use of a single thermal
pad beneath the part, and heat is, therefore, dissipated mainly
through the package pins.
Package thermal dissipation limits the performance of switching
frequency vs. output load, as illustrated in Figure 7 and Figure 8
V DD1
GND 1
DISABLE
V DD1
V IA
V IB
NC
NC
NC
NC
V OA
V OB
V DDA
GND A
V DDB
GND B
for the maximum load capacitance that can be driven with a 1 Ω
series gate resistance for different values of output voltage. For
example, this curve shows that a typical ADuM3223 can drive a
large MOSFET with 140 nC gate charge at 8 V output (which is
equivalent to a 17 nF load) up to a frequency of about 300 kHz.
Each of the ADuM3223 / ADuM4223 isolator outputs has a thermal
shutdown protection function, which sets an output to a logic
low when the rising junction temperature typically reaches
Figure 19. Recommended PCB Layout
PROPAGATION DELAY-RELATED PARAMETERS
Propagation delay is a parameter that describes the time it takes
a logic signal to propagate through a component. The propagation
delay to a logic low output can differ from the propagation delay
to a logic high output. The ADuM3223 / ADuM4223 specify t DLH
(see Figure 20) as the time between the rising input high logic
threshold, V IH , to the output rising 10% threshold. Likewise, the
falling propagation delay, t DHL , is defined as the time between
the input falling logic low threshold, V IL , and the output falling
90% threshold. The rise and fall times are dependent on the
150°C, and turns back on after the junction temperature falls
from the shutdown by approximately 10°C.
OUTPUT LOAD CHARACTERISTICS
The ADuM3223 / ADuM4223 output signals depend on the
characteristics of the output load, which is typically an N-channel
MOSFET. The driver output response to an N-channel MOSFET
load can be modeled with a switch output resistance (R SW ), an
inductance due to the printed circuit board trace (L TRACE ), a series
gate resistor (R GATE ), and a gate-to-source capacitance (C gs ), as
shown in Figure 21.
loading conditions and are not included in the propagation
delay, which is the industry standard for gate drivers.
V IA
ADuM3223/
ADuM4223
V OA R SW
R GATE
L TRACE
C GS
V O
90%
Figure 21. RLC Model of the Gate of an N-Channel MOSFET
OUTPUT
R SW is the switch resistance of the internal ADuM3223 / ADuM4223
10%
V IH
driver output, which is about 1.1 Ω. R GATE is the intrinsic gate
resistance of the MOSFET and any external series resistance. A
MOSFET that requires a 4 A gate driver has a typical intrinsic
INPUT
V IL
t DLH
t R
t DHL
t F
gate resistance of about 1 Ω and a gate-to-source capacitance,
C GS , of between 2 nF and 10 nF. L TRACE is the inductance of the
printed circuit board trace, typically a value of 5 nH or less for a
well-designed layout with a very short and wide connection from
Figure 20. Propagation Delay Parameters
the ADuM3223 / ADuM4223 output to the gate of the MOSFET.
Rev. D | Page 15 of 20
相关PDF资料
PDF描述
1879456-2 RES 1.2 OHM 2000W 5% WW LUG
3-640473-3 CONN RCPT 3POS 20AWG .156 YELLOW
ADUM4223BRWZ-RL IC 5KV ISO HALF BR DRVR 16SOIC
1625949-1 RES 11M OHM 30W 1% TF FERR
3-644860-2 CONN RCPT 2POS 18AWG MTA-156
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ADUM4223WARWZ 功能描述:4A Gate Driver Magnetic Coupling 5000Vrms 2 Channel 16-SOIC 制造商:analog devices inc. 系列:iCoupler? 包装:管件 零件状态:有效 技术:磁耦合 通道数:2 电压 - 隔离:5000Vrms 共模瞬态抗扰度(最小值):50kV/μs 传播延迟 tpLH / tpHL(最大值):59ns,59ns 脉宽失真(最大):- 上升/下降时间(典型值):12ns,12ns 电流 - 输出高,低:- 电流 - 峰值输出:4A 电压 - 正向(Vf)(典型值):- 电流 - DC 正向(If):- 电压 - 电源:4.5 V ~ 18 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:16-SOIC(0.295",7.50mm 宽) 供应商器件封装:16-SOIC 认可:CSA,UR,VDE 标准包装:47
ADUM4223WARWZ-RL 功能描述:4A Gate Driver Magnetic Coupling 5000Vrms 2 Channel 16-SOIC 制造商:analog devices inc. 系列:iCoupler? 包装:带卷(TR) 零件状态:有效 技术:磁耦合 通道数:2 电压 - 隔离:5000Vrms 共模瞬态抗扰度(最小值):50kV/μs 传播延迟 tpLH / tpHL(最大值):59ns,59ns 脉宽失真(最大):- 上升/下降时间(典型值):12ns,12ns 电流 - 输出高,低:- 电流 - 峰值输出:4A 电压 - 正向(Vf)(典型值):- 电流 - DC 正向(If):- 电压 - 电源:4.5 V ~ 18 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:16-SOIC(0.295",7.50mm 宽) 供应商器件封装:16-SOIC 认可:CSA,UR,VDE 标准包装:1,000
ADUM4223WBRWZ 功能描述:4A Gate Driver Magnetic Coupling 5000Vrms 2 Channel 16-SOIC 制造商:analog devices inc. 系列:iCoupler? 包装:管件 零件状态:有效 技术:磁耦合 通道数:2 电压 - 隔离:5000Vrms 共模瞬态抗扰度(最小值):50kV/μs 传播延迟 tpLH / tpHL(最大值):54ns,54ns 脉宽失真(最大):- 上升/下降时间(典型值):12ns,12ns 电流 - 输出高,低:- 电流 - 峰值输出:4A 电压 - 正向(Vf)(典型值):- 电流 - DC 正向(If):- 电压 - 电源:7.5 V ~ 18 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:16-SOIC(0.295",7.50mm 宽) 供应商器件封装:16-SOIC 认可:CSA,UR,VDE 标准包装:47
ADUM4223WBRWZ-RL 功能描述:4A Gate Driver Magnetic Coupling 5000Vrms 2 Channel 16-SOIC 制造商:analog devices inc. 系列:iCoupler? 包装:带卷(TR) 零件状态:有效 技术:磁耦合 通道数:2 电压 - 隔离:5000Vrms 共模瞬态抗扰度(最小值):50kV/μs 传播延迟 tpLH / tpHL(最大值):54ns,54ns 脉宽失真(最大):- 上升/下降时间(典型值):12ns,12ns 电流 - 输出高,低:- 电流 - 峰值输出:4A 电压 - 正向(Vf)(典型值):- 电流 - DC 正向(If):- 电压 - 电源:7.5 V ~ 18 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:16-SOIC(0.295",7.50mm 宽) 供应商器件封装:16-SOIC 认可:CSA,UR,VDE 标准包装:1,000
ADUM4223WCRWZ 功能描述:4A Gate Driver Magnetic Coupling 5000Vrms 2 Channel 16-SOIC 制造商:analog devices inc. 系列:iCoupler? 包装:管件 零件状态:有效 技术:磁耦合 通道数:2 电压 - 隔离:5000Vrms 共模瞬态抗扰度(最小值):50kV/μs 传播延迟 tpLH / tpHL(最大值):54ns,54ns 脉宽失真(最大):- 上升/下降时间(典型值):12ns,12ns 电流 - 输出高,低:- 电流 - 峰值输出:4A 电压 - 正向(Vf)(典型值):- 电流 - DC 正向(If):- 电压 - 电源:11.5 V ~ 18 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:16-SOIC(0.295",7.50mm 宽) 供应商器件封装:16-SOIC 认可:CSA,UR,VDE 标准包装:47